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Hybrid improper antiferroelectricity—New insights for novel device concepts

Published online by Cambridge University Press:  11 December 2020

Xue-Zeng Lu  and
James M. Rondinelli
Xue-Zeng Lu*
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, USA
James M. Rondinelli
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, USA
*
Correspondence Email: [email protected]
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Abstract

Antiferroelectrics have been studied for decades, with most research focused on PbZrO3 or related compounds obtained through chemical substitution. Although there are several important antiferroelectrics found in AVO4 (A=Dy, Bi), orthorhombic ABC semiconductors (e.g., MgSrSi) and hydrogen-bonded antiferroelectric materials, experimentally demonstrated antiferroelectrics are far less common. Furthermore, antiferroelectrics have potential applications in energy storage and for strain and force generators. In recent years, hybrid improper ferroelectrics have been intensively studied, along which the hybrid improper antiferroelectric phase was proposed and demonstrated in (001) Ruddlesden−Popper A3B2O7 thin films from first-principles calculations. Later, the hybrid improper antiferroelectric phase was discovered experimentally in several Ruddlesden−Popper perovskites in bulk. Across the hybrid improper ferroelectric-antiferroelectric phase transition, several interesting phenomena were also predicted. In this snapshot review, we describe recent progress in hybrid improper antiferroelectricity.

Type
Review Article
Information
MRS Advances , Volume 5 , Issue 64: Snapshot reviews in materials advances 2020 , 2020 , pp. 3521 - 3545
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Copyright
Copyright © The Author(s), 2020, published on behalf of Materials Research Society by Cambridge University Press

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