Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-24T06:56:51.136Z Has data issue: false hasContentIssue false

How changes in the crystal temperature and the doping concentration impact upon bulk wurtzite zinc oxide’s electron transport response

Published online by Cambridge University Press:  07 May 2019

Poppy Siddiqua
Affiliation:
School of Engineering, The University of British Columbia, Kelowna, British Columbia, Canada V1V 1V7
Walid A. Hadi
Affiliation:
Department of Electrical and Computer Engineering, Florida State University, Panama City, Florida32405, U.S.A.
Michael S. Shur
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York12180-3590, U.S.A.
Stephen K. O’Leary*
Affiliation:
School of Engineering, The University of British Columbia, Kelowna, British Columbia, Canada V1V 1V7
*
Get access

Abstract

The role that changes in the crystal temperature and the doping concentration play in shaping the character of the steady-state and transient transport response of electrons within bulk wurtzite zinc oxide will be examined. Monte Carlo electron transport simulations are drawn upon for the purposes of this analysis. We find that both the crystal temperature and the doping concentration greatly influence the character of the steady-state and transient electron transport response. In particular, for the case of steady-state electron transport, the peak drift velocity decreases by 30% as the crystal temperature is increased from 100 to 700 K, this decrease in velocity being only 20% as the doping concentration is increased from 1015 to 1019 cm-3. The impact on the transient electron drift velocity is not as acute.

Type
Articles
Copyright
Copyright © Materials Research Society 2019 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Morkoç, H. and Özgür, Ü., Zinc Oxide: Fundamentals, Materials and Device Technology (Wiley, Weinheim, 2009).CrossRefGoogle Scholar
Kim, D. L. and Kim, H. J., Proc. of SPIE Vol. 7603, 760313 (2010).Google Scholar
Ferry, D. K., Phys. Rev. B 12, 2361 (1975).CrossRefGoogle Scholar
Hadi, W. A., Shur, M. S., and O’Leary, S. K., J. Mater. Sci.: Mater. Electron. 25, 4675 (2014).Google Scholar
Siddiqua, P. and O’Leary, S. K., J. Mater. Sci.: Mater. Electron. 29, 3511 (2018).Google Scholar