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High-Power Eu-Doped GaN Red LED Based on a Multilayer Structure Grown at Lower Temperatures by Organometallic Vapor Phase Epitaxy

Published online by Cambridge University Press:  19 January 2017

W. Zhu ,
B. Mitchell ,
D. Timmerman ,
A. Koizumi ,
T. Gregorkiewicz  and
Y. Fujiwara
W. Zhu
Affiliation:
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
B. Mitchell
Affiliation:
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan Department of Physics, West Chester University, West Chester, PA, 19383, USA
D. Timmerman
Affiliation:
Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
A. Koizumi
Affiliation:
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
T. Gregorkiewicz
Affiliation:
Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
Y. Fujiwara*
Affiliation:
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
*
*(Email: [email protected])

Abstract

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A modification of the growth structure of Eu-doped GaN (GaN:Eu) from a monolayer to a multilayer structure (MLS) consisting of alternating GaN and GaN:Eu, was shown to enhance the emission properties. Similarly, lowering the growth temperature of the GaN:Eu to 960°C nearly doubled the photoluminescence emission intensity, and also enhanced device performance. Hence, to design a higher power GaN:Eu red LED, a multilayer structure consisting of 40 pairs of alternating GaN and GaN:Eu was grown at 960°C. This combination resulted in the fabrication of an LED with a maximum output power of 110 μW, which is 5.8 times more output power per GaN:Eu layer thickness as compared to the best previously reported device. Moreover, it was found that the MLS sample grown at 960°C maintained a high crystal quality with low surface roughness, which enabled an increase in the number of pairs from 40 pairs to 100 pairs. An MLS-LED consisting of 100 pairs of alternating GaN/GaN:Eu layers was successfully fabricated, and had a maximum output power of 375 μW with an external quantum efficiency of 4.6%. These are the highest values reported for this system.

Keywords

III-Vdevicesnanostructure
Type
Articles
Information
MRS Advances , Volume 2 , Issue 3: Electronics, Magnetics and Photonics , 2017 , pp. 159 - 164
Copyright
Copyright © Materials Research Society 2017 

References

REFERENCES

Baker, T. J., Haskell, B. A., Wu, F., Speck, J. S. and Nakamura, S., Jpn. J. Appl. Phys., 45, L154, 2006.Google Scholar
Ohkawa, K., Watanabe, T., Sakamoto, M., Hirako, A., and Deura, M., J. Cryst. Growth 343, 13 (2012).Google Scholar
Kishino, K., Nagashima, K., and Yamano, K., Appl. Phys. Express. 6, 012101 (2013).CrossRefGoogle Scholar
Hwang, J.I., Hashimoto, R., Saito, S., and Nunoue, S., Appl. Phys. Express 7, 071003 (2014).Google Scholar
Nishikawa, A., Kawasaki, T., Furukawa, N., Terai, Y., and Fujiwara, Y., Appl. Phys. Express 2, 071004 (2009).Google Scholar
Nishikawa, A., Furukawa, N., Kawasaki, T., Terai, Y., and Fujiwara, Y., Appl. Phys. Lett. 97, 051113 (2010).CrossRefGoogle Scholar
Nishikawa, A., Furukawa, N., Lee, D., Kawabata, K., Matsuno, T., Harada, R., Terai, Y., and Fujiwara, Y., MRS Proc. 1342, 9 (2012).Google Scholar
Fujiwara, Y. and Dierolf, V., Jpn. J. Appl. Phys. 53, 05FA13 (2014).Google Scholar
Zhu, W., Mitchell, B., Timmerman, D., Uedono, A., Koizumi, A., and Fujiwara, Y., APL. Mat. 4, 056103 (2016).Google Scholar
Mitchell, B., Timmerman, D., Poplawsky, J., Zhu, W., Lee, D., Wakamatsu, R., Takatsu, J., Matsuda, M., Guo, W., Lorenz, K., Alves, E., Koizumi, A., Dierolf, V. and Fujiwara, Y., Scientific Report, srep18808 (2016).Google Scholar
Vinh, N. Q., Minissale, S., Vrielinck, H., and Gregorkiewicz, T., Phys. Rev. B. 76, 085339–5 (2007).Google Scholar