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Graphene Films Prepared Using Energetic Physical Vapor Deposition

Published online by Cambridge University Press:  26 January 2017

Daniel T. Oldfield ,
Chi P. Huynh ,
Stephen C. Hawkins  and
Dougal G. McCulloch
Daniel T. Oldfield*
Affiliation:
Physics, School Sciences, RMIT University, Melbourne, Victoria3000, Australia CSIRO Materials Science and Engineering, Bayview Ave, Clayton, Victoria3168, Australia
Chi P. Huynh
Affiliation:
Department of Materials Engineering, Monash University, Clayton, Victoria3800, Australia
Stephen C. Hawkins
Affiliation:
Department of Materials Engineering, Monash University, Clayton, Victoria3800, Australia School of Mechanical and Aerospace Engineering, Queen’s University Belfast, Belfast BT9 5AH, United Kingdom
Dougal G. McCulloch
Affiliation:
Physics, School Sciences, RMIT University, Melbourne, Victoria3000, Australia
*
*(Email: [email protected])
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Abstract

Carbon films were energetically deposited onto copper foil using the physical vapor deposition technique filtered cathodic vacuum arc. Raman spectroscopy and x-ray absorption spectroscopy showed that high quality graphene films of uniform thickness can be deposited onto copper foil at temperatures of 850 °C. The films can be prepared at high deposition rates (∼1 nm/min) and were comparable to graphene films grown at 1050 °C using chemical vapor deposition. This lower growth temperature was made possible by the energetic carbon flux which assisted the arrangement of carbon atoms into graphene layers on the Cu growth surface. Floating substrate potential was found to produce the highest quality graphene and the addition of hydrogen gas during film growth resulted in more defective films.

Keywords

physical vapor deposition (PVD)chemical vapor deposition (CVD) (deposition)Raman spectroscopy
Type
Articles
Information
MRS Advances , Volume 2 , Issue 2: Nanomaterials , 2017 , pp. 117 - 122
Copyright
Copyright © Materials Research Society 2017 

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References

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