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Graphene Channels Interfaced with Quantum Dots in Field Effect Transistors: Electrical and Photo-Induced Effects

Published online by Cambridge University Press:  05 February 2016

Xin Miao ,
Samarth Trivedi  and
Haim Grebel
Xin Miao*
Affiliation:
Electronic Imaging Center and ECE Dept., New Jersey Institute of technology (NJIT), Newark, NJ 07102, U.S.A
Samarth Trivedi
Affiliation:
Department of Chemistry, New Jersey Institute of technology (NJIT), Newark, NJ 07102, [email protected]
Haim Grebel
Affiliation:
Electronic Imaging Center and ECE Dept., New Jersey Institute of technology (NJIT), Newark, NJ 07102, U.S.A
*
*(Email: [email protected])

Abstract

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Graphene-based field effect transistors (GFETs) were assessed when interfaced with well separated and precisely placed core/shell CdSe/ZnS semiconductor quantum dot (QD) arrays. The QDs were imbedded in a hexagonal hole-array, which was formed in a layer of anodized aluminum oxide on Si/SiO2 substrates. Graphene (single, or two layers), grown by chemical vapor deposition (CVD) on Cu foils, was transferred and placed on top of the QDs imbedded films and served as the transistor channel. Electrical characteristics under white-light illumination at various biasing conditions revealed that the photo current was decreasing upon increasing biasing. The device's photoluminescence (PL) as a function of both the drain-source and gate-source potentials also reduced as a function of the potential biases. We observed two maxima in the PL data while tilting the sample with respect to the incident laser beam. We attributed it to the optimal coupling between the incident and the emission wavelengths to resonating surface modes.

Keywords

laser-induced reactionnanostructureoptoelectronic
Type
Articles
Information
MRS Advances , Volume 1 , Issue 22: Electronics and Photonics , 2016 , pp. 1597 - 1603
Copyright
Copyright © Materials Research Society 2016 

References

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