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Electric Transport Characteristics of Gallium Iron Oxide Epitaxial Thin Film

Published online by Cambridge University Press:  18 May 2017

Tsukasa Katayama ,
Shintaro Yasui ,
Yosuke Hamasaki  and
Mitsuru Itoh
Tsukasa Katayama*
Affiliation:
Laboratory for Materials and Structures, Tokyo Institute of Technology, Midori-ku, Yokohama 226-8503, Japan
Shintaro Yasui
Affiliation:
Laboratory for Materials and Structures, Tokyo Institute of Technology, Midori-ku, Yokohama 226-8503, Japan
Yosuke Hamasaki
Affiliation:
Laboratory for Materials and Structures, Tokyo Institute of Technology, Midori-ku, Yokohama 226-8503, Japan
Mitsuru Itoh
Affiliation:
Laboratory for Materials and Structures, Tokyo Institute of Technology, Midori-ku, Yokohama 226-8503, Japan
*
*(Email: [email protected])
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Abstract

A Ga0.8Fe1.2O3 epitaxial thin film was fabricated on a SrTiO3(111) substrate using pulsed laser deposition. The film is c-axis-oriented and has multiple in-plane domains. In-plane magnetization measurements show that it exhibits ferrimagnetic behavior with a Curie temperature (TC) of 290 K. The insulating film exhibits hopping conduction with a resistivity (ρ) of 4 × 105 Ωcm at 300 K. The ρ value is four orders lower than that of a BiFeO3 film, probably owing to the formation of multiple in-plane domains in the Ga0.8Fe1.2O3 film. Positive magnetoresistance with a maximum value of 3.5% near TC was observed, suggesting that antiferromagnetic interaction between Fe3+ ions decreases carrier transfer between the ions.

Keywords

ceramicthin filmmagnetic properties
Type
Articles
Information
MRS Advances , Volume 2 , Issue 56: Energy Storage and Conversion , 2017 , pp. 3459 - 3464
Copyright
Copyright © Materials Research Society 2017 

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