Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-15T19:22:08.061Z Has data issue: false hasContentIssue false

Effects of Synthesis Parameters on CVD Molybdenum Disulfide Growth

Published online by Cambridge University Press:  04 July 2016

Gustavo A. Lara Saenz
Affiliation:
Electrical and Computer Engineering Department, University of Texas, El Paso, TX, U.S.A.
Chandan Biswas
Affiliation:
Electrical and Computer Engineering Department, University of Texas, El Paso, TX, U.S.A. Metallurgical, Materials and Biomedical Engineering Department, University of Texas, El Paso, TX, 79968, U.S.A.
Hisato Yamaguchi
Affiliation:
Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, U.S.A.
Claudia Narvaez Villarrubia
Affiliation:
Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, U.S.A.
Aditya D. Mohite
Affiliation:
Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, U.S.A.
Anupama B. Kaul*
Affiliation:
Electrical and Computer Engineering Department, University of Texas, El Paso, TX, U.S.A. Metallurgical, Materials and Biomedical Engineering Department, University of Texas, El Paso, TX, 79968, U.S.A.
*

Abstract

Core share and HTML view are not available for this content. However, as you have access to this content, a full PDF is available via the ‘Save PDF’ action button.

Since the isolation of graphene, a monolayer of sp2-bonded carbon atoms arranged in a hexagonal lattice, two-dimensional (2D) layered materials have attracted a great deal of attention due to their outstanding mechanical, optical and electronic properties. The research areas of interest for these new materials include exploring their novel properties, developing scalable approaches to synthesize these materials, and integrating them into a new generation of nanodevices. The utilization of 2D materials in devices has many advantages, which includes scaled materials to the limit of atomic-scale membranes, and the potential to form device structures on flexible and transparent substrates, among others. Transition metal dichalcogenides (TMDs) monolayers in particular, have received increasing attention in recent years, especially molybdenum disulfide (MoS2), which is one of the most well explored semiconducting materials in the 2D materials system. In this work we present the synthesis of MoS2 using chemical vapor deposition (CVD), where we have varied the synthesis parameters and compared the structure and quality of the CVD synthesized MoS2. At the same time, we have compared the characteristics with those obtained for mechanically exfoliated flakes from the bulk MoS2 crystal. The MoS2 quality has been analyzed using Raman spectroscopy.

Type
Articles
Copyright
Copyright © Materials Research Society 2016 

References

REFERENCES

Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., and Kis, A., Nat. Nanotechnol., 6, 147150 (2011).Google Scholar
Lara Saenz, G. A., Fadil, D., Karapetrov, G., and Kaul, A., to be submitted, (2016).Google Scholar
Lin, Y.-C., Zhang, W., Huang, J.-K., Liu, K.-K., Lee, Y.-H., Liang, C.-T., Chu, C.-W., and Li, L.-J., Nanoscale, 4, 6637 (2012).CrossRefGoogle ScholarPubMed
Zhan, Y., Liu, Z., Najmaei, S., Ajayan, P. M., and Lou, J., Small, 8, 966971 (2012).CrossRefGoogle Scholar
Najmaei, S., Liu, Z., Zhou, W., Zou, X., Shi, G., Lei, S., Yakobson, B. I., Idrobo, J.-C., Ajayan, P. M., and Lou, J., Nat. Mater., 12, 754–9 (2013).CrossRefGoogle Scholar
Benameur, M. M., Radisavljevic, B., Héron, J. S., Sahoo, S., Berger, H., and Kis, A., Nanotechnology, 22, 125706 (2011).Google Scholar
Ling, X., Lee, Y.-H., Lin, Y., Fang, W., Yu, L., Dresselhaus, M. S., and Kong, J., Nano Lett., 12, 464–72, (2014).CrossRefGoogle Scholar
van der Zande, A. M., Huang, P. Y., a Chenet, D., Berkelbach, T. C., You, Y., Lee, G.-H., Heinz, T. F., Reichman, D. R., a Muller, D., and Hone, J. C., Nat. Mater., 12, 554–61 (2013).CrossRefGoogle Scholar
Yu, Y., Li, C., Liu, Y., Su, L., Zhang, Y., and Cao, L., Sci. Rep., 3, 1866, (2013).Google Scholar
Lee, Y. H., Zhang, X. Q., Zhang, W., Chang, M. T., Te Lin, C., Di Chang, K., Yu, Y. C., Wang, J. T. W., Chang, C. S., Li, L. J., and Lin, T. W., Adv. Mater., 24, 23202325 (2012).Google Scholar
Wang, S., Rong, Y., Fan, Y., Pacios, M., Bhaskaran, H., He, K., and Warner, J. H., Chem. Mater., 26, 63716379 (2014).CrossRefGoogle Scholar
Lee, C., Yan, H., Brus, L. E., Heinz, T. F., Hone, J., and Ryu, S., ACS Nano, 4, 2695–700, (2010).Google Scholar
Lara Saenz, G. A., Biswas, C., Yamaguchi, H., Villarrubia, C. N. Mohite, A., and Kaul, A. B., manuscript in preparation, to be submitted (2016).Google Scholar