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Effect of UV Laser Irradiation on the properties of NiO films andZnO/NiO Heterostructures

Published online by Cambridge University Press:  03 February 2016

Srikanth Itapu ,
Kamruzzaman Khan  and
Daniel G. Georgiev
Srikanth Itapu*
Affiliation:
Department of EECS, University of Toledo, Toledo, OH 43606, U.S.A.
Kamruzzaman Khan
Affiliation:
Department of EECS, University of Toledo, Toledo, OH 43606, U.S.A.
Daniel G. Georgiev
Affiliation:
Department of EECS, University of Toledo, Toledo, OH 43606, U.S.A.
*
*(Email: [email protected])
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Abstract

The present work accentuates the effect of UV laser irradiation on theconductivity of nickel oxide (NiO) thin films, deposited at various temperaturesby radio-frequency reactive sputtering of Ni in oxygen containing atmosphere.The effect of UV irradiation on zinc oxide – nickel oxideheterostructures, obtained by sputtering, was examined as well. It was foundthat the resistivity of NiO changes from 12 Ω-cm to 0.62Ω-cm, and the majority carrier concentration from3.95x1017 holes/cm3 to 4.22x1020electrons/cm3. The current-voltage (I-V) characteristics of theZnO/NiO heterostructure shows an improved p-n diode behavior with the forwardbias current increasing for the laser-irradiated ZnO/NiO compared to theas-deposited stack. The observed improvement in diode-like behavior suggeststhat laser irradiation can be an important technique to controllably change thestructural, electrical and optical properties of metal oxide thin films.

Keywords

defectsHall effectlaser-induced reaction
Type
Articles
Information
MRS Advances , Volume 1 , Issue 4: Electronics and Photonics , 2016 , pp. 293 - 298
Copyright
Copyright © Materials Research Society 2016 

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References

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