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Dependence of structural and optoelectronic properties on thickness of γ-cui thin films deposited by vacuum thermal evaporation

Published online by Cambridge University Press:  28 March 2018

Lawrence K. Dintle*
Affiliation:
Department of Physics, University of Botswana, Private Bag UB0704, Gaborone, Botswana
Pearson V.C. Luhanga
Affiliation:
Department of Physics, University of Botswana, Private Bag UB0704, Gaborone, Botswana
Charles Moditswe
Affiliation:
Department of Physics and Astronomy, Botswana International University of Science and Technology, Private Bag 16, Palapye, Botswana
Cosmas M. Muiva
Affiliation:
Department of Physics and Astronomy, Botswana International University of Science and Technology, Private Bag 16, Palapye, Botswana
*
*Corresponding author: Email address: [email protected], [email protected] (Dintle L.)
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Abstract

We report on the formation of gamma phase cuprous iodide (CuI) thin films of various film thickness with high (111) orientation deposited by vacuum thermal evaporation of powders attained through a cost-saving extraction method. The study investigated the dependence of structural and optoelectronic properties of the thin films on film thickness. Structural characterisation of the films revealed an increase in crystallite size and a decrease in dislocation density with film thickness which indicated an improvement in the crystallographic microstructure. There was a strong orientation towards (111) growth. The Scanning Electron Microscope images of the CuI thin films showed a compact morphology with an increase in larger grains as film thickness increased. The thin films showed a mean optical transmittance of around 70 % in the visible region with a decreasing trend as thickness increased. There was an observed red shift of the transmittance spectra with film thickness. All thin films also showed good electrical conductivity. However, the figure of merit improved with decreasing thickness. The good optical transmittance and relatively low resistivity qualify the CuI thin films as candidates for electro-optical device applications.

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Articles
Copyright
Copyright © Materials Research Society 2018 

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References

Amalina, M. and Rusop, M., “Investigation on the I2:CuI thin films and its stability over time,” Microelectronic Engineering , vol. 108, p. 106111, August 2013.CrossRefGoogle Scholar
Grundmann, M., Schein, F., Lorenz, M., Böntgen, T., Lenzner, J. and Wenckstern, H. v., “Cuprous iodide – a p-type transparent semiconductor: history and novel applications,” Physica Status Solidi A-applications and materials science, vol. 210, no. 9, p. 16711703, August 2013.Google Scholar
Kaushik, D. K., Selvaraj, M., Ramu, S. and Subrahmanyam, A., “Thermal evaporatedCoppper Iodide (CuI) thin films: A note on the disorder evaluated through the temperature dependent electrical properties,” Solar Energy Materials and Solar Cells, vol. 165, pp. 5258, June 2017.CrossRefGoogle Scholar
Gharibzadeh, S., Moshaii, A., Nejand, B. A. and Ahmadi, V., “Large grain γ-CuI thin film growth on a copper foil as a hole transport material by an easy and facile method,” Material Letters, vol. 202, pp. 154157, Sepetember 2017.CrossRefGoogle Scholar
Gao, G., Gu, M., Liu, X., Zheng, Y. and Shi, E., “Photoluminescence study of annealing effects on CuI crystals grown by evaporation method,” Crystal Research and Technology, vol. 47, no. 7, pp. 707712, June 2012.CrossRefGoogle Scholar
Amalina, M., Azilawati, Y., Rasheid, N. and Rusop, M., “The properties of CuI thin films prepared by mister atomizer at different doping concentrations,” Procedia Engineering , vol. 56, p. 731736, 2013 .CrossRefGoogle Scholar
Huangfu, M., Shen, Y., Zhu, G., Xu, K., Cao, M., Gu, F. and Wang, L., “Copper iodide as an inorganic hole conductor for perovskite solar cells with different thickness of mesoporous layer and hole transport layer,” Applied Surface Science, vol. 357, no. Part B, pp. 22342240, December 2015.CrossRefGoogle Scholar
Albadi, J., Keshavarz, M., S. F., and Vafaie-nezhad, , “Copper iodide nanoparticles on poly(4-vinyl pyridine): A new and efficient catalyst for multicomponent click synthesis of 1,4-disubstituted-1,2,3-triazoles in water,” Catalysis Communications, vol. 27, pp. 1720, October 2012.CrossRefGoogle Scholar
McNaughton, J. L., Elbert, J. D., Dilworth, B. and L. B. D, ., “Iron and Copper Availability from Various Sources,” Poultry Science, vol. 53, no. 4, pp. 13251330, July 1974.CrossRefGoogle Scholar
Johan, M., Si-Wen, K., Hawari, N. and Aznan, N., “Synthesis and Characterization of Copper (I) Iodide Nanoparticles via Chemical Route,” International Journal of Electrochemical Sciences, vol. 7, pp. 49424950, 2012.Google Scholar
Shahbazi, S. and Afshar, S., “A facile, green, one pot synthesis of cuprous iodide nanoparticles using the mechanochemical method,” Materials Letters , vol. 115, p. 190193, 2014.CrossRefGoogle Scholar
Bulakhe, R., Shinde, N., Thorat, R., Nikam, S. and Lokhande, C., “Deposition of copper iodide thin films by chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR) methods,” Current Applied Physics , vol. 13, pp. 16611667, 2013.CrossRefGoogle Scholar
Nejand, B., Ahmadi, V. and Shahverdi, H., “Growth of plate like γ-CuI nanostructure on copper substrate by hydrothermal evaporation of solution,” Materials Letters , vol. 132, p. 138140, 2014.CrossRefGoogle Scholar
Tanaka, T., Kawabata, K. and Hirose, M., “Transparent, conductive CuI films prepared by rf-dc coupled magnetron sputtering,” Thin Solid Films , Vols. 281-282, pp. 179181, 1996.CrossRefGoogle Scholar
Sirimanne, P., Rusop, M., Shirata, T., Soga, T. and Jimbo, T., “Characterization of transparent conducting CuI thin films prepared by pulse laser deposition technique,” Chemical Physics Letters , vol. 366, p. 485489, 2002.CrossRefGoogle Scholar
Moditswe, C., Muiva, C., Luhanga, P. and Juma, A., “Effect of annealing temperature on structural and optoelectronic properties of γ-CuI thin films prepared by the thermal evaporation method,” Ceramics International, vol. 43, p. 51215126, 2017.CrossRefGoogle Scholar
Das, S., Choi, J. and Alford, T., “P3HT: PC61BM based solar cells employing solution processed copper iodide as the hole transport layer,” Solar Energy Materials & Solar Cells , vol. 133, p. 255259, 2015.CrossRefGoogle Scholar
Luhanga, P., Muiva, C., Coetzee, S., Maabong, K., Tiedt, L. and Monowe, P., “Optical properties of highly oriented nanostructured CuI (111) thin films,” Journal Of Optoelectronics And Advanced Materials, vol. 18, no. 9-10, pp. 837841, September - October 2016.Google Scholar
Moditswe, C., Muiva, C. M. and Juma, A., “Highly conductive and transparent Ga-doped ZnO thin films deposited by chemical spray pyrolysis,” Optik, vol. 127, p. 83178325, 2016.CrossRefGoogle Scholar
Wiedenhorst, B., Höfener, C., L. Y., , K. J., , Alff, L. and Gross, R., “Strain effects and microstructure of epitaxial manganite thin films and heterostructures,” Applied Physics Letters, vol. 74, p. 3636, 1999.CrossRefGoogle Scholar
Kim, J. H. and Moyer, P. J., “Thickness effects on the optical transmission characteristics of small hole arrays on thin gold films,” Optics Express , vol. 14, no. 15, pp. 65956603, 2006.CrossRefGoogle Scholar
Wojtyła, S., Macyk, W. and Baran, T., “Photosensitization of CuI – the role of visible light induced Cu1 → Cu2 transition in photocatalytic degradation of organic pollutants and inactivation of microorganisms,” Photochemical & Photobiological Sciences, vol. 16, p. 10791087, 2017.CrossRefGoogle Scholar
Sharma, B. and Rabinal, M., “Ambient synthesis and optoelectronic properties of copper iodide semiconductor nanoparticles,” Journal of Alloys and Compounds , vol. 556, p. 198202, 2013.CrossRefGoogle Scholar
Amalina, M., Zainun, A., Rasheid, N. and Rusop, M., “The Electrical Conductivity of Copper (I) Iodide (CuI) Thin Films Prepared by Mister Atomizer,” in 10th IEEE International Conference on Semiconductor Electronics (ICSE), Kuala Lumpur, 2012.Google Scholar
Yıldırım, M. and Ates, A., “Influence of films thickness and structure on the photo-response of ZnO films,” Optics Communications, vol. 283, p. 13701377, 2010.CrossRefGoogle Scholar
Padiyan, D., Marikani, A. and Murali, K., “Influence of thickness and substrate temperature on electrical and photoelectrical properties of vacuum-deposited CdSe thin films,” Materials Chemistry and Physics , vol. 78, p. 5158, 2002.CrossRefGoogle Scholar
Studenyak, I., Kranjčec, M. and Kurik, M., “Urbach Rule in Solid State Physics,” International Journal of Optics and Applications , vol. 4, no. 3, pp. 7683, 2014.Google Scholar
Rao, T. P. and Kumar, M. C. S., “Physical properties of Ga-doped ZnO thin films by spray pyrolysis,” Journal of Alloys and Compounds, vol. 506, pp. 788793, 2010.Google Scholar
Akaltun, Y., Yıldırım, M., Ateş, A. and Yıldırım, M., “The relationship between refractive index-energy gap and the film thickness effect on the characteristic parameters of CdSe thin films,” Optics Communications , vol. 284, p. 23072311, 2011.CrossRefGoogle Scholar
Haacke, G., “New figure of merit for transparent conductors,” Journal of Applied Physics , vol. 47, p. 4086, 1976.CrossRefGoogle Scholar