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Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs

Published online by Cambridge University Press:  23 May 2016

J. Franco ,
B. Kaczer ,
A. Vais ,
A. Alian ,
H. Arimura ,
V. Putcha ,
S. Sioncke ,
N. Waldron ,
D. Zhou  and
L. Nyns
...Show all authors
J. Franco*
Affiliation:
imec, Kapeldreef 75, 3001 Leuven, Belgium
B. Kaczer
Affiliation:
imec, Kapeldreef 75, 3001 Leuven, Belgium
A. Vais
Affiliation:
imec, Kapeldreef 75, 3001 Leuven, Belgium KU Leuven, Belgium
A. Alian
Affiliation:
imec, Kapeldreef 75, 3001 Leuven, Belgium
H. Arimura
Affiliation:
imec, Kapeldreef 75, 3001 Leuven, Belgium
V. Putcha
Affiliation:
imec, Kapeldreef 75, 3001 Leuven, Belgium KU Leuven, Belgium
S. Sioncke
Affiliation:
imec, Kapeldreef 75, 3001 Leuven, Belgium
N. Waldron
Affiliation:
imec, Kapeldreef 75, 3001 Leuven, Belgium
D. Zhou
Affiliation:
imec, Kapeldreef 75, 3001 Leuven, Belgium
L. Nyns
Affiliation:
imec, Kapeldreef 75, 3001 Leuven, Belgium
J. Mitard
Affiliation:
imec, Kapeldreef 75, 3001 Leuven, Belgium
L. Witters
Affiliation:
imec, Kapeldreef 75, 3001 Leuven, Belgium
M. Heyns
Affiliation:
imec, Kapeldreef 75, 3001 Leuven, Belgium KU Leuven, Belgium
G. Groeseneken
Affiliation:
imec, Kapeldreef 75, 3001 Leuven, Belgium KU Leuven, Belgium
N. Collaert
Affiliation:
imec, Kapeldreef 75, 3001 Leuven, Belgium
D. Linten
Affiliation:
imec, Kapeldreef 75, 3001 Leuven, Belgium
A. Thean
Affiliation:
imec, Kapeldreef 75, 3001 Leuven, Belgium
*
*(Email: [email protected])
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Abstract

We present a review of our recent studies of Bias Temperature Instability (BTI) in Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) fabricated with different material systems, highlighting the reliability opportunities and challenges of each novel device family. We discuss first the intrinsic reliability improvement offered by SiGe and Ge p-channel technologies, if a Si cap is used to passivate the channel, in order to fabricate a standard SiO2/HfO2 gate stack. We focus on SiGe gate stack optimizations for maximum BTI reliability, and on a simple physics-based model able to reproduce the experimental trends. This model framework is then used to understand the suboptimal BTI reliability and excessive time-dependent variability induced by oxide defect charging in different high-mobility channel gate stacks, such as Ge/GeOx/high-k and InGaAs/high-k. Finally we discuss how to pursue a reduction of charge trapping in alternative material systems in order to boost the device reliability and minimize time-dependent variability.

Keywords

SiGeIII-V
Type
Articles
Information
MRS Advances , Volume 1 , Issue 49: Electronics and Photonics , 2016 , pp. 3329 - 3340
Copyright
Copyright © Materials Research Society 2016 

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References

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