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Behavior of nitrogen-related luminescence centers in laser-cut single-crystalline diamond under irradiation with keV electron beam

Published online by Cambridge University Press:  08 June 2017

Kenji Maruoka ,
Taiki Naito ,
Osamu Maida  and
Toshimichi Ito
Kenji Maruoka*
Affiliation:
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
Taiki Naito
Affiliation:
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
Osamu Maida
Affiliation:
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
Toshimichi Ito
Affiliation:
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
*
*(Email: [email protected])
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Abstract

We have found that several nitrogen-related luminescence centers appear at 389 nm, 503 nm (H3 center), 575 nm (NV0 center), 637 nm (NV- center) in single-crystalline Ib diamond cut by means of a YAG laser irradiation process, followed by a suitable hydrogen microwave-plasma treatment, and that cathodoluminescence peaks related to these centers substantially change in intensity by irradiating the sample with 15-keV electron beam (EB). The relative number of 389-nm centers originating from a pair of a substitutional nitrogen atom and an adjacent interstitial carbon atom increased while the concentrations of the vacancy-related centers were reduced with increasing 15-keV EB doses. These facts indicate that both the process-induced self-interstitials and the vacancies in the diamond rather easily moved to more preferential positions to form their stabler defect states, being suggestive of possibility to control densities of NV and NV-related centers.

Keywords

diamonddefectsluminescence
Type
Articles
Information
MRS Advances , Volume 2 , Issue 43: Electronic Devices and Materials , 2017 , pp. 2355 - 2360
Copyright
Copyright © Materials Research Society 2017 

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References

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