Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-30T23:40:22.298Z Has data issue: false hasContentIssue false
  • English
  • Français

Bandgap Energies of Cubic AlxGa1−x NyAs1−y Calculated by Means of theDielectric Method

Published online by Cambridge University Press:  05 February 2016

Hiroyuki Naoi  and
Takeyuki Matsumoto
Hiroyuki Naoi*
Affiliation:
Department of Electrical and Computer Engineering, National Institute of Technology, Wakayama College, 77 Nojima, Nada-Cho, Gobo, Wakayama 644−0023, Japan
Takeyuki Matsumoto
Affiliation:
Department of Electrical and Computer Engineering, National Institute of Technology, Wakayama College, 77 Nojima, Nada-Cho, Gobo, Wakayama 644−0023, Japan
*
*(Email: [email protected])
Get access

Abstract

Bandgap energies of the group III-V quaternary alloy semiconductor, cubic AlxGa1−x NyAs1−y , were calculated by means ofthe dielectric method. While only GaN and GaAs are considered to be directtransition type among the four constituent binary compounds of this quaternaryalloy system, the calculation results show that the bandgap energy range coveredin the direct transition regime of this alloy system was further extended to thehigher energy side of GaN as well as to the lower energy sides of GaAs. Theextension to the higher energy side was attributed to the larger direct bandgapof AlN. On the other hand, the extension to the lower energy side was caused bythe large bowing in the bandgap energy between group III nitrides and arsenides.Calculations under lattice matching to Si and GaAs are also presented.

Keywords

compoundelectronic materialIII-V
Type
Articles
Information
MRS Advances , Volume 1 , Issue 2: Energy and Sustainability , 2016 , pp. 175 - 180
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Adachi, Sadao, “Properties of Semiconductor Alloys: Group-IV, III-V, and II-VI Semiconductors” (WILEY, West Sussex, 2009).CrossRefGoogle Scholar
Vurgaftman, I., Meyer, J. R., and Ram-Mohan, L. R., J. Appl. Phys. 89, 5815 (2001) and references therein.CrossRefGoogle Scholar
Vurgaftman, I. and Meyer, J. R., J. Appl. Phys. 94, 3675 (2003) and references therein.CrossRefGoogle Scholar
Weyers, M. and Sato, M., Appl. Phys. Lett. 62, 1396 (1993).CrossRefGoogle Scholar
Naoi, H., Naoi, Y., and Sakai, S., Solid State Electron. 41, 319 (1997).CrossRefGoogle Scholar
Van Vechten, J. A., Phys. Rev. 182, 891 (1969).CrossRefGoogle Scholar
Van Vechten, J. A., Phys. Rev. 187, 1007 (1969).CrossRefGoogle Scholar
Van Vechten, J. A. and Bergstresser, T. K., Phys. Rev. B1, 3351 (1970).CrossRefGoogle Scholar
Sakai, S., Ueta, Y., and Terauchi, Y., Jpn. J. Appl. Phys. 32, 4413 (1993).CrossRefGoogle Scholar
Ueta, Y., Doctoral Dissertation (The University of Tokushima, March 1995).Google Scholar
Varshni, Y. P., Physica (Amsterdam) 34, 149 (1967).CrossRefGoogle Scholar
Gueddim, A., Zerdoum, R., and Bouarissa, N., J. Phys. Chem. Solids 67, 1618 (2006).CrossRefGoogle Scholar