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Atomic-scale Authentication with Resonant Tunneling Diodes

Published online by Cambridge University Press:  24 February 2016

J. Roberts ,
I. E. Bagci ,
M. A. M. Zawawi ,
J. Sexton ,
N. Hulbert ,
Y. J. Noori ,
C. S. Woodhead ,
M. Missous ,
M. A. Migliorato  and
U. Roedig
...Show all authors
J. Roberts
Affiliation:
Physics Department, Lancaster University, Lancaster, LA1 4YB, UK.
I. E. Bagci
Affiliation:
School of Computing and Communications, Lancaster University, Lancaster, LA1 4WA, UK.
M. A. M. Zawawi
Affiliation:
School of Electrical and Electronic Engineering, University of Manchester, M13 9PL, UK.
J. Sexton
Affiliation:
School of Electrical and Electronic Engineering, University of Manchester, M13 9PL, UK.
N. Hulbert
Affiliation:
Physics Department, Lancaster University, Lancaster, LA1 4YB, UK.
Y. J. Noori
Affiliation:
Physics Department, Lancaster University, Lancaster, LA1 4YB, UK.
C. S. Woodhead
Affiliation:
Physics Department, Lancaster University, Lancaster, LA1 4YB, UK.
M. Missous
Affiliation:
School of Electrical and Electronic Engineering, University of Manchester, M13 9PL, UK.
M. A. Migliorato
Affiliation:
School of Electrical and Electronic Engineering, University of Manchester, M13 9PL, UK.
U. Roedig
Affiliation:
School of Computing and Communications, Lancaster University, Lancaster, LA1 4WA, UK.
R. J. Young*
Affiliation:
Physics Department, Lancaster University, Lancaster, LA1 4YB, UK.
*
*(Email: [email protected])

Abstract

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The room temperature electronic characteristics of resonant tunneling diodes (RTDs) containing AlAs/InGaAs quantum wells are studied. Differences in the peak current and voltages, associated with device-to-device variations in the structure and width of the quantum well are analyzed. A method to use these differences between devices is introduced and shown to uniquely identify each of the individual devices under test. This investigation shows that quantum confinement in RTDs allows them to operate as physical unclonable functions.

Keywords

semiconductingmolecular beam epitaxy (MBE)electronic material
Type
Articles
Information
MRS Advances , Volume 1 , Issue 22: Electronics and Photonics , 2016 , pp. 1625 - 1629
Copyright
Copyright © Materials Research Society 2016 

References

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