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Analytical Study of the Thermal Activation of Tb Doped Amorphous SiC:H Thin Films

Published online by Cambridge University Press:  17 June 2016

J. A. Guerra ,
K. Tucto ,
L. M. Montañez ,
F. De Zela ,
J. A. Töfflinger ,
A. Winnaker  and
R. Weingärtner
J. A. Guerra*
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú Department of Material Science 6, University of Erlangen-Nuremberg, Martenstr. 6, Erlangen 91058, Germany
K. Tucto
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú
L. M. Montañez
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú
F. De Zela
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú
J. A. Töfflinger
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú
A. Winnaker
Affiliation:
Department of Material Science 6, University of Erlangen-Nuremberg, Martenstr. 6, Erlangen 91058, Germany
R. Weingärtner
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú
*
*(Email: [email protected])
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Abstract

The luminescence of Tb-doped a-SiC:H thin films with different Tb concentrations under sub-bandgap photon excitation was investigated. Two independent processes were identified. The annealing induced activation of the Tb3+ and the inhibition of host-mediated non-radiative recombination paths. The integrated emission intensity is described by a rate equation model, considering these two. In this study, the luminescence enhancement with increasing annealing temperature is shown. The optimal Tb concentration and annealing temperature for the highest Tb-related light emission intensity is determined. Finally, a parameter proportional to the number of optically active ions is found through the aforementioned model.

Keywords

Tbamorphousluminescence
Type
Articles
Information
MRS Advances , Volume 1 , Issue 38: Materials Design , 2016 , pp. 2689 - 2694
Copyright
Copyright © Materials Research Society 2016 

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