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Synthesis of Transparent Semiconducting Metal-oxides via PolymericPrecursor Route for Application in Thin-film Field-EffectTransistors

Published online by Cambridge University Press:  23 March 2016

Cleber A. Amorim ,
Giovani Gozzi ,
Dante L. Chinaglia ,
Francisco José dos Santos  and
Lucas Fugikawa Santos
Cleber A. Amorim
Affiliation:
Departamento de Física, Univ Estadual Paulista - UNESP, Av. 24A, 1515, CEP: 13500-970,Rio Claro, SP, Brazil.
Giovani Gozzi
Affiliation:
Departamento de Física, Univ Estadual Paulista - UNESP, Av. 24A, 1515, CEP: 13500-970,Rio Claro, SP, Brazil.
Dante L. Chinaglia
Affiliation:
Departamento de Física, Univ Estadual Paulista - UNESP, Av. 24A, 1515, CEP: 13500-970,Rio Claro, SP, Brazil.
Francisco José dos Santos
Affiliation:
Departamento de Física, Univ Estadual Paulista - UNESP, Av. 24A, 1515, CEP: 13500-970,Rio Claro, SP, Brazil.
Lucas Fugikawa Santos*
Affiliation:
Departamento de Física, Univ Estadual Paulista - UNESP, Av. 24A, 1515, CEP: 13500-970,Rio Claro, SP, Brazil. Departamento de Física, Univ Estadual Paulista - UNESP, R. Cristovao Colombo 2265, CEP 15054-000, São José do Rio Preto, SP, Brazil.
*
*(Email: [email protected])
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Abstract

Solution-processed zinc oxide (ZnO) thin-film transistors (TFTs) obtained viahydrolysis/pyrolysis of an organic precursor present an excellent technique toobtain high performance electronic devices with low manufacturing cost. In thecurrent work, we propose the use of an alternative deposition method, based on apolymeric precursor route (known as Pechini), to obtain solution-processed ZnOcompact films as the active layer of TFTs. The elimination of the organic phaseand the formation of inorganic thin-films was carried out by thermal treatmentat different temperatures (ranging from 200°C to 500°C) and atdifferent times (from 5 min to 2 hours), being monitored by UV-vis and infrared(IR) optical absorption spectroscopy. It was observed that, for temperaturesabove 400°C and treatment times superior to 30 min, the organic phasewas completely eliminated, remaining only the inorganic (metal oxide) phase. Theoptical bandgap of the resulting ZnO films, determined from UV-vis absorption,is about 3.4 eV. The electrical characteristics (output and transfer curves) ofthe obtained devices demonstrate the feasibility of Pecchini method to buildsolution-processed metal oxide TFTs. The results for the electrical mobility ofthe majority charge-carriers (electrons) and for the threshold voltage were 0.39cm2.V-1.s-1 and 0.45 V, respectively.

Keywords

thin filmelectrical propertiesdifferential thermal analysis (DTA)
Type
Articles
Information
MRS Advances , Volume 1 , Issue 7: Electronics and Photonics , 2016 , pp. 489 - 494
Copyright
Copyright © Materials Research Society 2016 

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References

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