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Reliability of the Properties of (Pb,La)(Zr,Ti)O3Capacitors with Non–noble Metal Oxide Electrodes stored in anH2 Atmosphere

Published online by Cambridge University Press:  19 February 2016

Yoko Takada ,
Naoki Okamoto ,
Takeyasu Saito ,
Kazuo Kondo ,
Takeshi Yoshimura ,
Norifumi Fujimura ,
Koji Higuchi ,
Akira Kitajima  and
Rie Shishido
Yoko Takada*
Affiliation:
Department of Chemical Engineering, Osaka Prefecture University, Sakai 599-8531, Japan
Naoki Okamoto
Affiliation:
Department of Chemical Engineering, Osaka Prefecture University, Sakai 599-8531, Japan
Takeyasu Saito
Affiliation:
Department of Chemical Engineering, Osaka Prefecture University, Sakai 599-8531, Japan
Kazuo Kondo
Affiliation:
Department of Chemical Engineering, Osaka Prefecture University, Sakai 599-8531, Japan
Takeshi Yoshimura
Affiliation:
Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, Japan
Norifumi Fujimura
Affiliation:
Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, Japan
Koji Higuchi
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki 567-0047, Japan
Akira Kitajima
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki 567-0047, Japan
Rie Shishido
Affiliation:
Institute of Multidisciplinary Research for Advances Materials, Tohoku University, Sendai 980-8577, Japan
*
*(Email: [email protected])
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Abstract

We fabricated ferroelectric (Pb,La)(Zr,Ti)O3 (PLZT) capacitors withSn:In2O3 (ITO) or Pt top electrodes and investigatedthe ferroelectric properties of these PLZT capacitors. The shape ofpolarization–voltage hysteresis loops was essentially unchanged andthe decrease in the remnant polarization of the ITO/PLZT/Pt capacitors wassmaller than that of the Pt/PLZT/Pt capacitors after annealing with 3%D2 (in N2) at 200°C and 1 Torr(i.e., FGAD). Time of flightsecondary mass spectrometry revealed that the D atoms were incorporated into thePLZT film of the Pt/PLZT/Pt capacitors after 3% D2 annealing,resulting in a decrease in the ferroelectric properties. In comparison, no D ionsignal was detected in the PLZT film after FGAD for ITO/PLZT/Ptcapacitors.

Keywords

ferroelectricitysecondary ion mass spectroscopy (SIMS)thin film
Type
Articles
Information
MRS Advances , Volume 1 , Issue 5: Electronics and Photonics , 2016 , pp. 369 - 374
Copyright
Copyright © Materials Research Society 2016 

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References

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