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Production and Characterization of Tb3+/Yb3+ Co-Activated AlON Thin Films for Down Conversion Applications in Photovoltaic Cells

Published online by Cambridge University Press:  05 July 2017

K. Tucto ,
L. Flores ,
J. Guerra ,
J. Töfflinger ,
J. Dulanto ,
R. Grieseler ,
A. Osvet ,
M. Batentschuk  and
R. Weingärtner
K. Tucto*
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú
L. Flores
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú
J. Guerra
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú Department of Material Science 6, University of Erlangen-Nuremberg, Martenstr. 6, Erlangen 91058, Germany
J. Töfflinger
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú
J. Dulanto
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú
R. Grieseler
Affiliation:
Chair Materials for Electronics, Institute of Materials Engineering and Institute of Micro and Nanotechnologies MacroNano, TU Ilmenau, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau, Germany
A. Osvet
Affiliation:
Department of Material Science 6, University of Erlangen-Nuremberg, Martenstr. 6, Erlangen 91058, Germany
M. Batentschuk
Affiliation:
Department of Material Science 6, University of Erlangen-Nuremberg, Martenstr. 6, Erlangen 91058, Germany
R. Weingärtner
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú
*
*(Email: [email protected])
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Abstract

Terbium and ytterbium co-doped aluminum oxynitride thin films were grown onto silicon substrates using radiofrequency magnetron sputtering. Aluminum oxynitride samples doped with 4.6 at. % of Yb3+ and co-doped with 0.4 at. % of Tb3+ were obtained. The prepared samples were annealed from 150°C to 850°C in steps of 100°C. By using energy dispersive X-ray analysis we measured the sample composition and the doping concentration. The emission intensities at different annealing temperatures were characterized using photoluminescence measurements upon excitation at 325 nm. The 5D4 → 7F5 main transition of Tb3+ and the characteristic near infrared emission at 980 nm of Yb3+ were recorded. In order to study the luminescence behavior of the samples in terms of a down conversion process, we have plotted the integrated areas of the main transition peaks versus the annealing temperature.

Keywords

sputteringluminescencelanthanide
Type
Articles
Information
MRS Advances , Volume 2 , Issue 52: Electronic Devices and Materials , 2017 , pp. 2989 - 2995
Copyright
Copyright © Materials Research Society 2017 

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References

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