Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-28T12:16:12.590Z Has data issue: false hasContentIssue false
  • English
  • Français

Nanoscale Characterization of WSe2 for Opto-electronics Applications

Published online by Cambridge University Press:  07 June 2017

Nirmal Adhikari ,
Avra Bandyopadhyay  and
Anupama Kaul
Nirmal Adhikari
Affiliation:
University of Texas at El Paso, El Paso, TX, United States
Avra Bandyopadhyay
Affiliation:
University of Texas at El Paso, El Paso, TX, United States
Anupama Kaul*
Affiliation:
University of Texas at El Paso, El Paso, TX, United States
*
*E-mail: [email protected]
Get access

Abstract

Two dimensional (2D) thin transition metal dichalcogenides are being widely investigated for optoelectronics applications. Here, we report on the interfacial study of WSe2 with photo-absorber materials for efficient charge transport using Kelvin Probe Force Microscopy (KPFM) for solar cell applications. The WSe2 in these experiments was synthesized using Chemical Vapor Deposition (CVD) with a WO3 powder and Se pellets as the precursors, where the selenium was placed upstream in an Ar carrier gas within the furnace at a temperature zone of 260-270°C. For the interfacial analysis, nanoscale KPFM measurements show an average surface potential of 125 meV for the CVD synthesized WSe2 flakes. KPFM measurements signify that a thin layer of WSe2 can be used to suppress back recombination of carriers between the electron transport layer (ETL) and the absorber layer. A proper band alignment between ETL and absorber layer helps to increase the overall device performance, which we will elaborate upon in this work. Capacitance-voltage and capacitance-frequency measurements were measured to study the role of defects.

Keywords

defectschemical vapor deposition (CVD) (chemical reaction)photovoltaic
Type
Articles
Information
MRS Advances , Volume 2 , Issue 60: Nanomaterials , 2017 , pp. 3715 - 3720
Copyright
Copyright © Materials Research Society 2017 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Pak, J., Jang, J., Cho, K., Kim, T.-Y., Kim, J.-K., Song, Y., Hong, W.-K., Min, M., Lee, H. and Lee, T.: Enhancement of photodetection characteristics of MoS 2 field effect transistors using surface treatment with copper phthalocyanine. Nanoscale 7, 18780 (2015).CrossRefGoogle Scholar
Hossain, R.F., Deaguero, I.G., Boland, T. and Kaul, A.B.: Solution dispersed 2D graphene & MoS 2 for an inkjet printed biocompatible photodetector, in Lester Eastman Conference (LEC), 2016 (IEEE2016), pp. 19.CrossRefGoogle Scholar
Kaul, A.B.: Chemically and mechanically exfoliated MoS 2 for electronic & opto-electronic devices, in Lester Eastman Conference (LEC), 2016 (IEEE2016), pp. 4.CrossRefGoogle Scholar
Delgado, A., Catalan, J.A., Yamaguchi, H., Villarrubia, C.N., Mohite, A.D. and Kaul, A.B.: Characterization of 2D MoS 2 and WS 2 Dispersed in Organic Solvents for Composite Applications. MRS Advances, 1 (2016).CrossRefGoogle Scholar
Michel, M., Desai, J.A., Biswas, C. and Kaul, A.B.: Engineering chemically exfoliated dispersions of two-dimensional graphite and molybdenum disulphide for ink-jet printing. Nanotechnology 27, 485602 (2016).CrossRefGoogle Scholar
Catalán, J.A. and Kaul, A.B.: Polydimethylsiloxane and polyisoprene-based graphene composites for strain-sensing. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35, 03D106 (2017).Google Scholar
Cho, K., Min, M., Kim, T.-Y., Jeong, H., Pak, J., Kim, J.-K., Jang, J., Yun, S.J., Lee, Y.H. and Hong, W.- K.: Electrical and optical characterization of MoS2 with sulfur vacancy passivation by treatment with alkanethiol molecules. ACS nano 9, 8044 (2015).CrossRefGoogle ScholarPubMed
Adhikari, N., Dubey, A., Khatiwada, D., Mitul, A.F., Wang, Q., Venkatesan, S., Iefanova, A., Zai, J., Qian, X., Kumar, M. and Qiao, Q.: Interfacial study to suppress charge carrier recombination for high efficiency Perovskite solar cells. ACS Appl. Mater. Interfaces (2015).CrossRefGoogle ScholarPubMed
Adhikari, N., Dubey, A., Gaml, E.A., Vaagensmith, B., Reza, K.M., Mabrouk, S.A.A., Gu, S., Zai, J., Qian, X. and Qiao, Q.: Crystallization of a perovskite film for higher performance solar cells by controlling water concentration in methyl ammonium iodide precursor solution. Nanoscale 8, 2693 (2016).CrossRefGoogle ScholarPubMed
Adhikari, N., Khatiwada, D., Dubey, A. and Qiao, Q.: Device and morphological engineering of organic solar cells for enhanced charge transport and photovoltaic performance. J. Photon. Energy. 5, 057207 (2015).CrossRefGoogle Scholar
Podzorov, V., Gershenson, M., Kloc, C., Zeis, R. and Bucher, E.: High-mobility field-effect transistors based on transition metal dichalcogenides. Appl. Phys. Lett. 84, 3301 (2004).CrossRefGoogle Scholar
Bernardi, M., Palummo, M. and Grossman, J.C.: Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials. Nano Lett. 13, 3664 (2013).CrossRefGoogle ScholarPubMed
Muntasir, T. and Chaudhary, S.: Defects in solution-processed dithienylsilole-based smallmolecule photovoltaic thin-films. J. Appl. Phys. 119, 025501 (2016).CrossRefGoogle Scholar
Glatzel, T., Marrón, D.F., Schedel-Niedrig, T., Sadewasser, S. and Lux-Steiner, M.C.: CuGaSe 2 solar cell cross section studied by Kelvin probe force microscopy in ultrahigh vacuum. Applied physics letters 81, 2017 (2002).CrossRefGoogle Scholar
Zhou, H., Chen, Q., Li, G., Luo, S., Song, T.-b., Duan, H.-S., Hong, Z., You, J., Liu, Y. and Yang, Y.: Interface engineering of highly efficient perovskite solar cells. Science 345, 542 (2014).CrossRefGoogle ScholarPubMed
Streetman, B.G. and Banerjee, S.: Solid state electronic devices, (Prentice Hall New Jersey2000).Google Scholar