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IR hot carrier based photodetection in titanium nitride oxide thin film-Si junctions

Published online by Cambridge University Press:  24 February 2020

Nicholas A. Güsken ,
Alberto Lauri ,
Yi Li ,
Andrea Jacassi ,
Takayuki Matsui ,
Brock Doiron ,
Ryan Bower ,
Anna Regoutz ,
Andrei Mihai  and
Peter K. Petrov
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Nicholas A. Güsken*
Affiliation:
The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdom
Alberto Lauri
Affiliation:
The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdom
Yi Li
Affiliation:
The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdom Chair in Hybrid Nanosystems, Nanoinstitute Munich, Fakultät für Physik, Ludwig-Maximilians Universität München, 80539 München, Germany
Andrea Jacassi
Affiliation:
The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdom
Takayuki Matsui
Affiliation:
The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdom
Brock Doiron
Affiliation:
The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdom
Ryan Bower
Affiliation:
Department of Materials, Imperial College London, London SW7 2AZ, United Kingdom
Anna Regoutz
Affiliation:
Department of Materials, Imperial College London, London SW7 2AZ, United Kingdom
Andrei Mihai
Affiliation:
Department of Materials, Imperial College London, London SW7 2AZ, United Kingdom
Peter K. Petrov
Affiliation:
Department of Materials, Imperial College London, London SW7 2AZ, United Kingdom
Rupert F. Oulton
Affiliation:
The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdom
Lesley F. Cohen
Affiliation:
The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdom
Stefan A. Maier
Affiliation:
The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdom Chair in Hybrid Nanosystems, Nanoinstitute Munich, Fakultät für Physik, Ludwig-Maximilians Universität München, 80539 München, Germany
*
*Correspondence: [email protected]
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Abstract:

Hot carrier based methods constitute a valuable approach for efficient and silicon compatible sub-bandgap photodetection. Although, hot electron excitation and transfer have been studied extensively on traditional materials such as Au and Ti, reports on alternative materials such as titanium nitride (TiN) are rare. Here, we perform hot hole photodetection measurements on a p-Si/metal thin film junction using Ti, Au and TiN. This material is of interest as it constitutes a refractory alternative to Au which is an important property for plasmonic applications where high field intensities can occur. In contrast to Au, a TiN/Si junction does not suffer from metal diffusion into the Si, which eases the integration with current Si-fabrication techniques. This work shows that a backside illuminated p-Si/TiN system can be used for efficient hot hole extraction in the IR, allowing for a responsivity of 1 mA/W at an excitation wavelength of 1250 nm and at zero bias. Via a comparison between TiN and other commonly used materials such as Au, the origin of this comparably high photoresponse can be traced back to be directly linked to a thin TiO2-x interfacial layer allowing for a distinct hot-hole transfer mechanism. Moreover, the fabrication of TiN nanodisk arrays is demonstrated which bears great promise to further boost the device efficiency.

Keywords

optoelectronicphotoconductivityplasmonicphotonic
Type
Articles
Information
MRS Advances , Volume 5 , Issue 35-36: Electronic, Photonic and Magnetic Materials , 2020 , pp. 1843 - 1850
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Copyright
Copyright © Materials Research Society 2020

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References

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