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Investigation of the Influence of Deep-Level Defects on the Conversion Efficiency of Si-based Solar Cells

Published online by Cambridge University Press:  19 January 2016

Vladimir G. Litvinov ,
Nikolay V. Vishnyakov ,
Valery V. Gudzev ,
Nikolay B. Rybin ,
Dmitry S. Kusakin ,
Alexander V. Ermachikhin ,
Sergey M. Karabanov ,
Sergey P. Vikhrov ,
Andrey S. Karabanov  and
Evgeny V. Slivkin
Vladimir G. Litvinov*
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Nikolay V. Vishnyakov
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Valery V. Gudzev
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Nikolay B. Rybin
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Dmitry S. Kusakin
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Alexander V. Ermachikhin
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Sergey M. Karabanov
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Sergey P. Vikhrov
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Andrey S. Karabanov
Affiliation:
Helios-Resource Ltd., Saransk, Mordovia, 1 Proletarskaya Str., 430001, Russian Federation
Evgeny V. Slivkin
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
*
*(Email: [email protected])
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Abstract

The influence of deep level defects (DLs) on the conversion efficiency of multicrystalline Si-based standard solar cells (SCs) is investigated. Multicrystalline p-type Si wafers with 156×156 mm dimensions and 200 μm thickness were used for SCs preparation. Three types of SCs with conversion efficiency 10%, 16.8% and 20.4% were studied using capacitance voltage characteristics method (C-V) and by current deep level transient spectroscopy (I-DLTS). The correlation between the total concentration of DLs and the values of the SCs conversion efficiency is found.

Keywords

deep level transient spectroscopy (DLTS)defectsphotovoltaic
Type
Articles
Information
MRS Advances , Volume 1 , Issue 14: Energy and Sustainability , 2016 , pp. 911 - 916
Copyright
Copyright © Materials Research Society 2016 

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References

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