Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-24T15:44:20.861Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth Control of Twin InSb/GaAs Nano-Stripes by Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 August 2017

Phisut Narabadeesuphakorn ,
Jirayu Supasil ,
Supachok Thainoi ,
Aniwat Tandaechanurat ,
Suwit Kiravittaya ,
Noppadon Nuntawong ,
Suwat Sopitopan ,
Songphol Kanjanachuchai ,
Somchai Ratanathammaphan  and
Somsak Panyakeow
Phisut Narabadeesuphakorn
Affiliation:
Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand
Jirayu Supasil
Affiliation:
Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand
Supachok Thainoi
Affiliation:
Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand
Aniwat Tandaechanurat
Affiliation:
International School of Engineering (ISE), Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand
Suwit Kiravittaya
Affiliation:
Advanced Optical Technology (AOT) Laboratory, Department of Electrical and Computer Engineering, Faculty of Engineering, Naresuan University, Phitsanulok 65000, Thailand
Noppadon Nuntawong
Affiliation:
National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency (NSTDA), Pathumthani 12120, Thailand
Suwat Sopitopan
Affiliation:
Thai Microelectronics Center (TMEC), National Electronics and Computer Technology Center, National Science and Technology Development Agency (NSTDA), Chachoengsao 24000, Thailand
Songphol Kanjanachuchai
Affiliation:
Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand
Somchai Ratanathammaphan
Affiliation:
Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand
Somsak Panyakeow*
Affiliation:
Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand
*
*(Email: [email protected])
Get access

Abstract

InSb has been considered as a promising material for spintronic applications owing to its pronounced spin effects as a result of large intrinsic electronic g-factor. In addition, embedding InSb quantum nanostructures in a GaAs matrix could create type-II band alignment, where radiation lifetimes are longer than those of the typical type-I systems. Such characteristics are promising for memory devices and infrared photonic applications. The growth of InSb/GaAs quantum nanostructures by strain driven mechanism using molecular beam epitaxy with low growth temperature, slow growth rate, Sb soaking process prior to In deposition, and small amount of In deposition typically creates a mixture of twin and single nano-stripe structures with truncated pyramid shape. In this work, we further investigate the growth mechanism of such twin InSb/GaAs nano-stripes by controlling the growth conditions, consisting of nanostructure growth duration and growth temperature. When the growth temperature is kept to less than 300°C and In deposition is set to only a few monolayers, we found that 25-40% of formed nanostructures are twin InSb/GaAs nano-stripes. However, when the In deposition is stopped immediately after the spotty reflection high-energy electron diffraction patterns are observed, the ratio of twin nano-stripes to single ones is increased to 50-60%. We therefore describe the growth mechanism of twin nano-stripes as the early state of single nano-stripe formation, where the twin nano-stripes are initially formed during the first monolayer of InSb formation as a result of large lattice mismatch of 14.6%. When In deposition is increased to a few monolayers, the gap between twin nano-stripes is filled up and consequently forms the single nano-stripes instead. With this particular twin nano-stripe growth mechanism, the preservation of high ratio of twin nano-stripe formation can be expected by further reducing the growth temperature, i.e. less than 260°C. These twin nano-stripes may find applications in the fields of spintronics and novel interference nano-devices.

Keywords

molecular beam epitaxy (MBE)nanostructureself-assembly
Type
Articles
Information
MRS Advances , Volume 2 , Issue 51: Electronic Devices and Materials , 2017 , pp. 2943 - 2949
Copyright
Copyright © Materials Research Society 2017 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Pidgeon, C. R., Mitchell, D. L., and Brown, R. N., Phys. Rev. 154, 737 (1967).CrossRefGoogle Scholar
Terent’ev, Y. V., Mukhin, M. S., Toropov, A. A., Nestoklon, M. O., Meltser, B. Ya., Semenov, A. N., Solov’ev, V. A., and Ivanov, S. V., Phys. Rev. B 87, 045315 (2013).CrossRefGoogle Scholar
Hatami, F., Kim, S. M., Yuen, H. B., and Harris, J. S., Appl. Phys. Lett. 89, 133115 (2006).CrossRefGoogle Scholar
Bennett, B. R., Magno, R., Boos, J. B., Kruppa, W., and Ancona, M. G., Solid State Electron. 49, 1875 (2005).CrossRefGoogle Scholar
Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R., and Krier, A., Semicond. Sci. Technol. 29, 075011 (2014).CrossRefGoogle Scholar
Borowska, A., Gutek, J., Czajka, R., Oszwaldowski, M., and Richter, A., Cryst. Res. Technol. 40, 523 (2005).CrossRefGoogle Scholar
Oszwaldowski, M., Berus, T., Borowska, A., Czajka, R., and Zimniak, M., phys. stat. sol. (c) 1, 351 (2004).CrossRefGoogle Scholar
Tsatsul’nikov, A. F., Ledentsov, N. N., Maksimov, M. V., Mel’tser, B. Y., Neklyudov, P. V., Shaposhnikov, S. V., Volovik, B. V., Krestnikov, I. L., Sakharov, A. V., A Bert, N., Kop’ev, P. S., Alferov, Zh. I., and Bimberg, D., Semiconductor 31, 55 (1997).CrossRefGoogle Scholar
Bennett, B. R., Thibado, P. M., Twigg, M. E., Glaser, E. R., Magno, R., Shanabrook, B. V., and Whitman, L. J., J. Vac. Sci. Technol. B 14, 2195 (1996).CrossRefGoogle Scholar
Kiravittaya, S., Sopitpan, S., Thainoi, S., Kanjanachuchai, S., Ratanathamaphan, S., and Panyakeow, S., presented at the 33rd International Conference on the Physics of Semiconductors, 2016 (unpublished).Google Scholar
Poempool, T., Zon, , Kiravittaya, S., Sopitpan, S., Thainoi, S., Kanjanachuchai, S., Ratanathamaphan, S., and Panyakeow, S., MRS Advances 1 (23), 1677-1682 (2016).CrossRefGoogle Scholar
Thainoi, S., Kiravittaya, S., Poempool, T., Zon, , Sopitpan, S., Kanjanachuchai, S., Ratanathammaphan, S., and Panyakeow, S., J. Cryst. Growth, (2017). http://dx.doi.org/10.1016/j.jcrysgro.2017.01.011.Google Scholar
Thainoi, S., Kiravittaya, S., Poempool, T., Zon, N. Nuntawong, Sopitpan, S., Kanjanachuchai, S., Ratanathammaphan, S., and Panyakeow, S., J. Cryst. Growth 468, 737 (2017).CrossRefGoogle Scholar
Bennett, B. R., Shanabrook, B. V., Thibado, P. M., Whitman, L. J., and Magno, R., J. Cryst. Growth 175/176, 888 (1997).CrossRefGoogle Scholar
Moiseev, K. D., Romanov, V. V., Dement’ev, P. A., and Ivanov, E. V., J. Cryst. Growth 414, 177 (2015).CrossRefGoogle Scholar
Moiseev, K., Parkhomenko, Y., and Nevedomsky, V., Thin Solid Films 543, 74 (2013).CrossRefGoogle Scholar