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Far-infrared spectrally selective LiTaO3 and AlN pyroelectric detectors using resonant subwavelength metal surface structures

Published online by Cambridge University Press:  30 June 2020

Christopher Arose
Affiliation:
Department of Physics, University of Central Florida, Orlando, Florida32816, USA
Anthony C. Terracciano
Affiliation:
Department of Mechanical and Aerospace Engineering, University of Central Florida, Orlando, Florida32816, USA Center for Advanced Turbomachinery and Energy Research, University of Central Florida, Orlando, Florida32816, USA
Robert E. Peale
Affiliation:
Department of Physics, University of Central Florida, Orlando, Florida32816, USA
Francisco Javier Gonzalez
Affiliation:
Department of Physics, University of Central Florida, Orlando, Florida32816, USA
Zachary Loparo
Affiliation:
Department of Mechanical and Aerospace Engineering, University of Central Florida, Orlando, Florida32816, USA Center for Advanced Turbomachinery and Energy Research, University of Central Florida, Orlando, Florida32816, USA
John Cetnar
Affiliation:
Air Force Research Lab, Sensors Directorate, Wright Patterson AFB OH
Subith S. Vasu
Affiliation:
Department of Mechanical and Aerospace Engineering, University of Central Florida, Orlando, Florida32816, USA Center for Advanced Turbomachinery and Energy Research, University of Central Florida, Orlando, Florida32816, USA
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Abstract

Plasmonic near-perfect absorbers, comprising metal films with a periodic array of subwavelength openings, were deposited on the surface of pyroelectric materials to create wavelength-selective far-infrared detectors. The detectors fabricated and investigated were based on one of two pyroelectric materials: (i) z-cut monocrystalline lithium tantalate (LiTaO3) wafers or, (ii) reactively sputtered aluminum nitride (AlN), with absorbers fabricated by contact photolithography. Spectrally selective absorption resonances were demonstrated by Fourier-transform spectroscopy. Spectrally-selective photoresponse was demonstrated with a tunable THz backward wave oscillator. Responsivity was estimated using a black body source to be ∼ 1 mV/W for AlN samples and ∼ 100 mV/W for LiTaO3 samples. Most similar work has focused on detectors for mid-wave and long-wave infrared spectral regions. Our focus on THz wavelengths beyond 20 μm is motivated by specific security and contraband sensing applications.

Type
Articles
Copyright
Copyright © Materials Research Society 2020

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