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Fabrication and characterization of (CaxSr1-x)Si2 films prepared by co-sputtering method

Published online by Cambridge University Press:  28 January 2020

Kodai Aoyama ,
Takao Shimizu ,
Hideto Kuramochi ,
Masami Mesuda ,
Ryo Akiike ,
Keisuke Ide ,
Takayoshi Katase ,
Toshio Kamiya ,
Yoshisato Kimura  and
Hiroshi Funakubo
Kodai Aoyama
Affiliation:
School of Materials and Chemical Technology, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
Takao Shimizu*
Affiliation:
School of Materials and Chemical Technology, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
Hideto Kuramochi
Affiliation:
Tosoh corporation, 2743-1 Hayakawa, Ayase, Kanagawa 252-1123, Japan
Masami Mesuda
Affiliation:
Tosoh corporation, 2743-1 Hayakawa, Ayase, Kanagawa 252-1123, Japan
Ryo Akiike
Affiliation:
Tosoh corporation, 2743-1 Hayakawa, Ayase, Kanagawa 252-1123, Japan
Keisuke Ide
Affiliation:
Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Takayoshi Katase
Affiliation:
Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Toshio Kamiya
Affiliation:
Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Yoshisato Kimura
Affiliation:
School of Materials and Chemical Technology, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
Hiroshi Funakubo
Affiliation:
School of Materials and Chemical Technology, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
*
*(Email: [email protected])
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Abstract

The {100}-oriented (CaxSr1-x)Si2 thin films have been prepared by co-sputtering method at various deposition temperatures. Constituent phase of the films primarily depends on the deposition temperature and the composition x. Although CaSi2 films consisted of layered structure regardless of deposition temperature, the phase was changed by the deposition temperature: the majority phases of the film deposited at 600°C, 650°C and 700°C were 1T layered structure, 1T layered structure + 2H layered structure and 1T layered structure + 6R layered structure, respectively. When the (CaxSr1-x)Si2 films deposited at 700°C, the α-SrSi2-type phase was mainly confirmed below x = 0.17, which is the most stable phase of SrSi2. However, the main phase of all CaxSr1-xSi2 films deposited at 600°C changed to be 1T-type layered structure. Substitution with Ca below x = 0.50 in the film deposited at 600°C led to the decrease in the electrical resistivity compared with that of pure SrSi2.

Keywords

thin film
Type
Articles
Information
MRS Advances , Volume 5 , Issue 10: Energy and Environment , 2020 , pp. 451 - 458
Copyright
Copyright © Materials Research Society 2020

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