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Comparison of simulated and measured light emission spectra from solid state incandescent light emitting devices

Published online by Cambridge University Press:  14 July 2020

Abhinav Shukla
Affiliation:
Thin Film Nano & Microelectronics Research Lab, Texas A&M University, College Station, TX, United States
Yue Kuo
Affiliation:
Thin Film Nano & Microelectronics Research Lab, Texas A&M University, College Station, TX, United States
Tyler W. Kuo
Affiliation:
Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, United States
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Abstract

In this paper, the light emission phenomena over solid-state incandescent light emitting devices have been modelled based on Planck's law of blackbody radiation. The emission spectra from the thermal excitation of nano-resistors with and without inclusion of an Indium Tin Oxide (ITO) or amorphous silicon (a-Si) thin film filter is simulated and compared with those measured from actual devices. The simulated emission spectra are further utilized to study the light characteristics for SSI-LED with ITO, a-Si and polycrystalline silicon (poly-Si) thin film filters.

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Articles
Copyright
Copyright © Materials Research Society 2020

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References

Holonyak, N. and Bevacqua, S. F., Appl. Phys. Lett., 1, 82 (1962).CrossRefGoogle Scholar
Kuo, Y. and Lin, C.-C., Appl. Phys. Lett., 102, 031117 (2013).CrossRefGoogle Scholar
Miller, D. A. B., Proc. IEEE, 88, 728 (2000).CrossRefGoogle Scholar
Kuo, Y., invited, “Solid State Incandescent Light Emitting Devices Made of IC Compatible Material and Fabrication Process,” IEEE Elec. Dev. Soc. News Letters, 22-2, 1-5 (2015).Google Scholar
Kuo, Y. and Lin, C.-C., Electrochem. Solid-State Lett., 2, Q59 (2013).CrossRefGoogle Scholar
Kuo, Y. and Lin, C.-C., Solid-State Electron., 89, 120 (2013).CrossRefGoogle Scholar
Lin, C.-C. and Kuo, Y., Appl. Phys. Lett., 106, 121107 (2015).CrossRefGoogle Scholar
Kuo, Y., IEEE International Electron Devices Meeting, San Francisco, CA, pp.4.7.1 (2014).Google Scholar
Kuo, Y. and Zhang, S., AVS 63rd meeting, Abst. 1844, Nashville, TN, November 6, 2016.Google Scholar
Zhang, S. and Kuo, Y., ECS J. Solid State Sci. Technol., 6(4) Q39-Q41 (2017).CrossRefGoogle Scholar
Kuo, Y., Appl. Phys. Lett., 67(15), 2173 (1995).CrossRefGoogle Scholar
Kuo, Y., Appl. Phys. Lett., 67(21), 3174 (1995).CrossRefGoogle Scholar
Kuo, Y., J. Electrochem. Soc., 143(4), 1469 (1996).CrossRefGoogle Scholar
Kuo, Y., Electrochem, J.. Soc., 143(8), 2680 (1996).Google Scholar
Kuo, Y. and Nominanda, H., Appl. Phys. Lett., 89, 173503 (2006).CrossRefGoogle Scholar
Nominanda, H. and Kuo, Y., ECS Trans., 3, (8) 333 (2006).Google Scholar
Nominanda, H. and Kuo, Y., Electrochem. Solid-State Lett. 10(8), H232-234 (2007).CrossRefGoogle Scholar
Kuo, Y. and Nominanda, H., MRS Proc., 989 (2007).CrossRefGoogle Scholar
Zhu, M., Kuo, Y., Lin, C. H. and Wang, Q., MRS Proc. 1321 (2011).CrossRefGoogle Scholar
Li, X., Zhang, C., Yang, Z. and Shang, A., Opt. Express, 21, A677 (2013).CrossRefGoogle Scholar
Miller, D. A. B., Proc. SPIE, CR70, 80 (1998).Google Scholar
Goossen, K. W., Cunningham, J. E., Jan, W. Y., and Leibenguth, R., IEEE J. Quantum Elect., 34, 431 (1998).CrossRefGoogle Scholar
Shukla and Kuo, Y., ECS Transactions, 97(2), 69-77 (2020).Google Scholar
Planck, M., The Theory of Heat Radiation, Masius, M., (transl.) (2nd ed.) (1914).Google Scholar
Agassi, J., Science, 156, 3771 (1967).CrossRefGoogle Scholar
Lin, C.-C. and Kuo, Y., ECS J. Solid State Sci. Technol., 3(10), Q182Q189 (2014).CrossRefGoogle Scholar
Zhang, J., Chia, A. C. E. and LaPierre, R. R., Semicond. Sci. Technol., 29, 054002 (2014).CrossRefGoogle Scholar
Zhang, S. and Kuo, Y., J. Phys. D: Appl. Phys., 51 (2018).Google Scholar
Hirose, M., Taniguchi, M., and Osaka, Y., J. Appl. Phys., 50, 377 (1979).CrossRefGoogle Scholar
Perez, M., Santiago, C., Renero, F., and Zuniga, C., Opt. Eng., 45, 123802 (2006).Google Scholar
Oh, G., Lee, K. S., and Kim, E. K., Current Applied Physics, 15, 794 (2015).CrossRefGoogle Scholar
Smith, T. and Guild, J, Trans. Opt. Soc., 33, 73 (1931).CrossRefGoogle Scholar
Gosnell, J. D., PhD. Thesis, Vanderbilt University, Tennessee (2010).Google Scholar