Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-24T18:31:36.860Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond

Published online by Cambridge University Press:  10 January 2018

V. Mortet ,
A. Taylor ,
M. Davydova ,
L. Fekete ,
Z. Vlčková Živcová ,
L. Klimša ,
N. Lambert ,
P. Hubík ,
D. Trémouilles  and
A. Soltani
V. Mortet*
Affiliation:
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic Czech Technical University, Faculty of Biomedical Engineering, Sportovců 2311, 272 01 Kladno, Czech Republic
A. Taylor
Affiliation:
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic
M. Davydova
Affiliation:
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic
L. Fekete
Affiliation:
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic
Z. Vlčková Živcová
Affiliation:
J. Heyrovsky Institute of Physical Chemistry of the Czech Academy of Sciences, Dolejškova 3, 182 23 Prague 8, Czech Republic
L. Klimša
Affiliation:
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic
N. Lambert
Affiliation:
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic
P. Hubík
Affiliation:
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic
D. Trémouilles
Affiliation:
LAAS-CNRS, Université de Toulouse, CNRS, 7 Avenue du Colonel Roche, 31400 Toulouse, France
A. Soltani
Affiliation:
LN2, Université de Sherbrooke, 3000 Boul. de l’Universite, Sherbrooke J1K 0A5, Canada
*
*(Email: [email protected])
Get access

Abstract

With a high affinity to carbon comparable to titanium and an electrically conductive carbide, zirconium has potential to form ohmic contact on boron doped diamond. In this work, formation of ohmic contacts on boron doped diamond using zirconium is studied in comparison to titanium. Boron doped diamond epitaxial layers have been grown by microwave plasma enhanced chemical vapour deposition with various B/C ratio. Circular Transmission Line Model structures were fabricated using standard micro-fabrication technologies. Specific contact resistance of fabricated contacts was determined for different boron concentrations and for various annealing temperatures. Ohmic contacts using zirconium are formed after annealing at 400 °C. Specific contact resistance steadily decreases with high temperature annealing down to a value of ca. 1 mΩ.cm2 after annealing at 700 °C for highly boron doped diamond. In comparison, titanium contact fabricated on highly doped diamond appears not stable under high temperature annealing.

Keywords

diamondelectrical propertiesRaman spectroscopy
Type
Articles
Information
MRS Advances , Volume 3 , Issue 33: Electronics, Magnetics and Photonics , 2018 , pp. 1931 - 1935
Check for updates
Copyright
Copyright © Materials Research Society 2018 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Koide, Y., Yokoba, M., Otsuki, A., Ako, F., Oku, T., Murakami, M., Diamond Relat. Mater. 6, 847 (1997).CrossRefGoogle Scholar
Das, K., Venkatesan, V., Miyata, K., Dreifus, D.L., Glass, J.T., Thin Solid Films 212, 19 (1992).Google Scholar
Traoré, A., Muret, P., Fiori, A., Eon, D., Gheeraert, E., Pernot, J., Appl. Phys. Lett. 104, 052105 (2014).Google Scholar
Shatynski, S.R., Oxid Met. 13, 105 (1979).CrossRefGoogle Scholar
Klootwijk, J.H., Timmering, C.E., Merits and limitations of circular TLM structures for contact resistance determination for novel III-V HBTs, Proc. 2004 Int. Conf. Microelectron. Test Struct. 17, 8 (2004).Google Scholar
Mortet, V., Vlčková Živcová, Z., Taylor, A., Frank, O., Hubík, P., Davydova, M. Trémouilles, D., Jomar, F., Barjon, J., Kavan, L., Refined analysis of boron doped diamond Raman spectrum. 28th International Conference on Diamond and Carbon Materials, Gothia Towers, Gothenburg, Sweden.Google Scholar
Mortet, V., Pernot, J., Jomard, F., Soltani, A., Remes, Z., Barjon, J., D’Haen, J., Haenen, K., Diamond Relat. Mater. 53, 29 (2015).Google Scholar
Johnston, C., Chalker, P.R., Buckley-Golder, I.M., van Rossum, M., Werner, M., Obermeier, E., Mater Sci Eng B. 29, 206 (1995).CrossRefGoogle Scholar
Nakanishi, J., Otsuki, A., Oku, T., Ishiwata, O., Murakami, M., J. Appl. Phys. 76, 2293 (1994).Google Scholar