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CdTe, ZnTe and Cd1-XZnXTe Nanolayers Grown by Atomic Layer Deposition on GaSb and GaAs (001) Oriented Substrates

Published online by Cambridge University Press:  07 September 2017

J. E. Flores-Mena ,
R. S. Castillo-Ojeda ,
J. Díaz-Reyes ,
M. Galván-Arellano  and
F. de Anda-Salazar
J. E. Flores-Mena
Affiliation:
Facultad de Ciencias de la Electrónica de la BUAP, Av. San Claudio y 18 Sur Colonia Jardines de San Manuel, Ciudad Universitaria, 72500, Puebla, Puebla, México.
R. S. Castillo-Ojeda
Affiliation:
Universidad Politécnica de Pachuca, Km. 20, Rancho Luna, Ex-Hacienda de Santa Bárbara, Municipio de Zempoala, Hidalgo. 43830. México.
J. Díaz-Reyes*
Affiliation:
Centro de Investigación en Biotecnología Aplicada, Instituto Politécnico Nacional. Ex–Hacienda de San Juan Molino, Km. 1.5. Tepetitla, Tlaxcala. 90700. México.
M. Galván-Arellano
Affiliation:
Depto. de Ingeniería Eléctrica, SEES, CINVESTAV-IPN. Apartado Postal 14-740, México, D. F. 07000. México.
F. de Anda-Salazar
Affiliation:
IICO-UASLP Ave. Karakorum 1470, Lomas 4a Sección. Álvaro Obregón 64, San Luis Potosí, S.L.P. C.P. 78210. México.
*
*Email: [email protected]
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Abstract

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Keywords

NanostructureAtomic layer depositionDislocations
Type
Articles
Information
MRS Advances , Volume 2 , Issue 50: International Materials Research Congress XXV , 2017 , pp. 2875 - 2882
Copyright
Copyright © Materials Research Society 2017 

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References

REFERENCES

Im, H., Wittenberg, N. J., Lindquist, N. C., Oh, S. H.. J. Mater. Res. 27, 663–671 (2012).CrossRefGoogle Scholar
Ruzin, A., Nemirovsky, Y.. J. Appl. Phys. 82, 4166–4171 (1997).Google Scholar
George, S. M.. Chem. Rev. 110, 111–131 (2010).Google Scholar
Ahonen, M., Pessa, M, Suntola, T.. Thin Solid Films 409, 138–146 (2202).Google Scholar
Berishev, I. E., De Anda, F., Mishournyi, V. A., Olvera, J., Ilyinskaya, N. D., Vasilyev, V. I.. J. Electrochem. Soc. 142, L189–L191 (1995).Google Scholar
Kim, B. J., Wanga, J. F., Ishikawa, Y., Parka, Y. G., Sindo, D., Abe, S., Masumoto, K., Isshiki, M.. J. Crystal Growth 235, 201–206 (2002).Google Scholar
Kaganer, V. M., Köhler, R., Schmidbauer, M., Opitz, R.. Jenichen, B.. Phys. Rev. B 55, 1793–1810 (1997).Google Scholar
Vinogradov, V. S., Karczewski, G., Kucherenko, I. V., Melnik, N. N., Fernandez, P.. Physics of the Solid State 50, 164–167 (2008).CrossRefGoogle Scholar
Su, Y. K., Gan, K. J., Hwang, J. S., Tyan, S. L.. J. Appl. Phys. 68, 5584–5587 (1990).Google Scholar
Fleischer, S., Beling, C. D., Fung, S., Nieveen, W. R., Squire, J. E., Zheng, J. Q., Missous, M.. J. Appl. Phys. 81, 190–198. (1997).Google Scholar
Amirtharaj, M., Pollak, F. H.. Appl. Phys. Lett. 45, 789–791 (1984).Google Scholar
Perkowitz, S., Thorland, R. H.. Phys. Rev. B: Solid State 9, 545–550 (1974).Google Scholar