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Blue Photoluminescence of (ZnO)0.92(InN)0.08

Published online by Cambridge University Press:  19 December 2016

Koichi Matsushima ,
Kazuya Iwasaki ,
Nanoka Miyahara ,
Daisuke Yamashita ,
Hyunwoong Seo ,
Kazunori Koga ,
Masaharu Shiratani  and
Naho Itagaki
Koichi Matsushima
Affiliation:
Kyushu University, Motooka 766, Fukuoka819-0395, Japan.
Kazuya Iwasaki
Affiliation:
Kyushu University, Motooka 766, Fukuoka819-0395, Japan.
Nanoka Miyahara
Affiliation:
Kyushu University, Motooka 766, Fukuoka819-0395, Japan.
Daisuke Yamashita
Affiliation:
Kyushu University, Motooka 766, Fukuoka819-0395, Japan.
Hyunwoong Seo
Affiliation:
Kyushu University, Motooka 766, Fukuoka819-0395, Japan.
Kazunori Koga
Affiliation:
Kyushu University, Motooka 766, Fukuoka819-0395, Japan.
Masaharu Shiratani
Affiliation:
Kyushu University, Motooka 766, Fukuoka819-0395, Japan.
Naho Itagaki*
Affiliation:
Kyushu University, Motooka 766, Fukuoka819-0395, Japan.
*
*E-mail: [email protected]
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Abstract

We have fabricated ZnInON (ZION), which is a pseudo-binary alloy of wurtzite ZnO and wurtzite InN and has a tunable band gap over the entire visible spectrum and a high optical absorption coefficient of 105 cm-1. ZION films grow two dimensionally at Ts = room temperature (RT) and 150°C, whereas they grow three dimensionally at Ts = 250 and 450°C. These films at RT and 150°C show a step-terrace structure with the step height of 0.27 nm, which corresponds to the height of a single-atomic-layer step and the half length of the c-lattice parameter of ZION. ZION film has the same a-lattice parameter of 0.325 nm as ZnO and a longer c-lattice parameter of 0.536 nm, indicating the coherent growth of ZION films on ZnO templates. ZION film grown at RT shows blue (2.89 and 3.08 eV) photoluminescence at RT.

Keywords

morphologysputteringelectrical properties
Type
Articles
Information
MRS Advances , Volume 2 , Issue 5: Electronics, Magnetics and Photonics , 2017 , pp. 277 - 282
Copyright
Copyright © Materials Research Society 2016 

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References

REFERENCES

Oxide and Nitride Semiconductors, ed. Yao, T. and Hong, S. K. (Springer, 2009) pp. 1–505.Google Scholar
U.S. Department of Energy, Energy Savings Potential of Solid-State Lighting in General Illumination Applications, Jan. 2012, (2012) 4. (http://apps1.eere.energy.gov/buildings/publications/pdfs/ssl/ssl_energy-savings-report_jan-2012.pdf).Google Scholar
Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y., Appl. Phys. Lett., 48, 353 (1986).Google Scholar
Itagaki, N., Iwasaki, T., and Watanabe, M., Den, T., U.S. Patent No. 8274078 (2008).Google Scholar
Itagaki, N., Matsushima, K., Yamashita, D., Seo, H., Koga, K., and Shiratani, M., Mater. Res. Express 1, 036405 (2014).Google Scholar
Matsushima, K., Shimizu, R., Ide, T., Yamashita, D., Seo, H., Koga, K., Shiratani, M., Itagaki, N., Thin Solid Films 587, 106 (2015).Google Scholar
Itagaki, N., Kuwahara, K., Nakahara, K., Yamashita, D., Uchida, G., Koga, K., Shiratani, M., Appl. Phys. Express 4, 011101 (2011).Google Scholar
Kuwahara, K., Itagaki, N., Nakahara, K., Yamashita, D., Uchida, G., Kamataki, K., Koga, K., Shiratani, M., Thin Solid Films 520, 4674 (2012).Google Scholar
Itagaki, N., Kuwahara, K., Matsushima, K., Oshikawa, K., Proc. SPIE 8263, 826306 (2012).Google Scholar
Itagaki, N., Kuwahara, K., MRS Proc. 1315, 15 (2011).Google Scholar
Suhariadi, I., Oshikawa, K., Kuwahara, K., Matsushima, K., Yamashita, D., Uchida, G., Koga, K., Shiratani, M., Itagaki, N., Jpn. J. Appl. Phys. 52, 11NB03 (2013).Google Scholar
Bornholdt, S., Itagaki, N., Kuwahara, K., Wulff, H., Shiratani, M., Kersten, H., Plasma Sources Sci. Technol. 22, 025019 (2013).Google Scholar
Suhariadi, I., Matsushima, K., Kuwahara, K., Oshikawa, K., Yamashita, D., Seo, H., Uchida, G., Kamtaki, K., Koga, K., Shiratani, M., Bornholdt, S., Kersten, H., Wulff, Harm, Itagaki, N., Jpn. J. Appl. Phys. 52, 01AC08 (2013).Google Scholar
Itagaki, N., Shiratani, M., Uchida, G., PCT/JP2013/055973, 2013.Google Scholar
Matsushima, K., Hirose, T., Kuwahara, K., Yamashita, D., Uchida, G., Seo, H., Kamataki, K., Koga, K., Shiratani, M., Itagaki, N., Jpn. J. Appl. Phys. 52, 11NM06 (2013).Google Scholar
Kuwahara, K., Itagaki, N., Nakahara, K., Yamashita, D., Uchida, G., Kamataki, K., Koga, K., Shiratani, M., Thin Solid Films 520, 4674 (2012).Google Scholar
Look, D.C., Leedy, K.D., Kiefer, A., Claflin, B., Itagaki, N., Matsushima, K., Surhariadi, I., Opt. Eng. 52, 033801 (2013).Google Scholar
Suhariadi, I., Itagaki, N., Kuwahara, K., Oshikawa, K., Yamashita, D., Uchida, G., Kamataki, K., Koga, K., Nakahara, K., Shiratani, M., Trans. Mater. Res. Soc. Jpn. 37, 165 (2012).Google Scholar
Matsushima, K., Ide, T., Yamashita, D., Seo, H., Koga, K., Shiratani, M., Itagaki, N., MRS Advances, 1, 115 (2016).Google Scholar
Bales, G. S. and Zangwill, A., Phys. Rev. B 41, 5500 (1990).Google Scholar