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Atomic Mechanism of Arsenic Monolayer Doping on oxide-free Silicon(111)

Published online by Cambridge University Press:  20 June 2016

Roberto C. Longo ,
Eric C. Mattson ,
Abraham Vega ,
Wilfredo Cabrera ,
Kyeongjae Cho ,
Yves Chabal  and
Peter Thissen
Roberto C. Longo
Affiliation:
Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Road, Richardson, TX 75080, USA
Eric C. Mattson
Affiliation:
Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Road, Richardson, TX 75080, USA
Abraham Vega
Affiliation:
Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Road, Richardson, TX 75080, USA
Wilfredo Cabrera
Affiliation:
Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Road, Richardson, TX 75080, USA
Kyeongjae Cho
Affiliation:
Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Road, Richardson, TX 75080, USA
Yves Chabal
Affiliation:
Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Road, Richardson, TX 75080, USA
Peter Thissen*
Affiliation:
Karlsruher Institut für Technologie (KIT), Institut für Funktionelle Grenzflächen (IFG), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
*
*(Email: [email protected])
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Abstract

The reaction pathway for shallow arsenic doping of silicon by methylarsenic acid molecules directly grafted on oxide-free, H-terminated Si(111) surfaces is unraveled combining Infrared absorption spectroscopy, X-ray Photoelectron Spectroscopy, Low Energy Ion Scattering and ab initio Molecular Dynamics simulations. The overall driving force is identified as a thermodynamic instability of As+5 in contact with silicon, which initiates a self-decomposition of chemisorbed methylarsenic molecules at ∼600 K. As the temperature is increased, the As-C bond breaks -- the weakest link of the adsorbed molecule -- with release of the organic ligand and a rearrangement from a monodentate to a bidentate bonding configuration. In this process, oxygen atoms evolve by partial desorption as H2O and partial incorporation into the surface Si atom backbonds. At ∼1050 K, diffusion of As into the sub-surface region of silicon is observed. There is no evidence for As desorption and no remaining C contamination.

Keywords

Sidopantinfrared (IR) spectroscopy
Type
Articles
Information
MRS Advances , Volume 1 , Issue 33: Nanotechnology , 2016 , pp. 2345 - 2353
Copyright
Copyright © Materials Research Society 2016 

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