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AlGaN/GaN MIS-HEMTs with a p-GaN Cap Layer

Published online by Cambridge University Press:  28 December 2017

Che-Ching Hsu ,
Pei-Chien Shen ,
Yi-Nan Zhong  and
Yue-Ming Hsin
Che-Ching Hsu
Affiliation:
Department of Electrical Engineering, National Central University No. 300, Zhongda Rd., Zhongli District, Taoyuan City32001, Taiwan
Pei-Chien Shen
Affiliation:
Department of Electrical Engineering, National Central University No. 300, Zhongda Rd., Zhongli District, Taoyuan City32001, Taiwan
Yi-Nan Zhong
Affiliation:
Department of Electrical Engineering, National Central University No. 300, Zhongda Rd., Zhongli District, Taoyuan City32001, Taiwan
Yue-Ming Hsin*
Affiliation:
Department of Electrical Engineering, National Central University No. 300, Zhongda Rd., Zhongli District, Taoyuan City32001, Taiwan
*
*(Email: [email protected])
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Abstract

In this study, AlGaN/GaN MIS-HEMTs with a p-GaN cap layer and ALD deposited Al2O3 gate insulator were fabricated. Devices with two different thicknesses of p-GaN cap layers were investigated and compared. AlGaN/GaN MIS-HEMT with an 8-nm p-GaN cap showed a better DC characteristics than device with a 5-nm p-GaN cap. The drain current of 662.9 mA/mm, a high on/off current ratio of 2.67×109 and a breakdown voltage of 672 V were measured in device with an 8-nm p-GaN cap. In addition, lateral leakage current was investigated by using adjacent MIS gate structures with a separation of 3 μm to investigate the leakage current.

Keywords

devicesIII-Vcompound
Type
Articles
Information
MRS Advances , Volume 3 , Issue 3: Electronics, Magnetics and Photonics , 2018 , pp. 143 - 146
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Copyright
Copyright © Materials Research Society 2017 

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References

REFERENCES

Choi, Y. C., Pophristic, M., and Eastman, L. F., Applied Power Electronics Conference and Exposition, 1264-1267 (2007).Google Scholar
Mishra, U. K., Shen, L., and Kazior, T. E., and Wu, Y.-F., Proceedings of the IEEE, 96, 287 (2008).CrossRefGoogle Scholar
Vetury, R., Zhang, N. Q., Keller, S., and Mishra, U. K., IEEE Trans. Electron Devices, 48, 560 (2001).Google Scholar
Wells, A. M., Uren, M. J., Balmer, R. S., Hilton, K. P., Martin, T., and Missous, M., Solid State Electronics, 49, 279 (2005).Google Scholar
Hilt, O., Bahat-Treidel, E., Cho, E., Singwald, S., and Wurfl, J., Int. Symp. Power Semiconductor Devices and ICs, 345–348 (2012).Google Scholar
Liao, W. C., Chen, Y. L., Chen, C. C., Chyi, J. I., and Hsin, Y. M., Appl. Phys. Lett., 104, 033503 (2014).Google Scholar
Liao, W.-C., Chyi, J.-I., and Hsin, Y.-M., IEEE Trans. on Electron Devices, 62, 835 (2015).CrossRefGoogle Scholar
Coffie, R., Buttari, D., Heikman, S., Keller, S., Chini, A., Shen, L., and Mishra, U. K., IEEE Electron Device Letters, 23, 588 (2002).CrossRefGoogle Scholar
Arulkumaran, S., Egawa, T., and Ishikawa, H., Jpn. J. Appl. Phys., 44, 2953 (2005).Google Scholar
Li, C.-H., Jiang, Y.-, Tsai, H.-C., Zhong, Y.-N., and Hsin, Y.-M., ECS Journal of Solid State Science and Technology, 6, S3125–S3128 (2017).CrossRefGoogle Scholar