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3-D Printing of Flexible Two Terminal Electronic Memory Devices

Published online by Cambridge University Press:  10 January 2018

Salah Maswoud
Affiliation:
Emerging Technologies Research Centre, De Montfort University, The Gateway, Leicester LE1 9RH, UK
Shashi Paul
Affiliation:
Emerging Technologies Research Centre, De Montfort University, The Gateway, Leicester LE1 9RH, UK
Iulia Salaoru*
Affiliation:
Emerging Technologies Research Centre, De Montfort University, The Gateway, Leicester LE1 9RH, UK
*
iContact author’s email: [email protected]
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Abstract

Recent strategy in the electronics sector is to ascertain the ways to make cheap, flexible and environmentally friendly electronic devices. The 3D inkjet printing technology is based on the Additive Manufacturing concept and it is with no doubt capable of revolutionising the whole system of manufacturing electronic devices including: material selection; design and fabrication steps and device configuration and architecture. Thus, 3D inkjet printing technology (IJP) is not only one of the most promising technologies to reduce the harmful radiation/ heat generation but also achieve reductions in manufacturing cost. Here, we explore the potential of 3D – inkjet printing technology to provide an innovative approach for electronic devices in especially information storage elements by seeking to manufacture and characterise state-of-art fully inkjet printed two terminal electronic memory devices. In this work, ink-jettable materials (Ag and PEDOT:PSS) were printed by a piezoelectric Epson Stylus P50 inkjet printing machine on a flexible substrate. All components of the memory cells of a simple metal/active layer/metal structure were deposited via inkjet printing. The quality of the printed layers was first assessed by Nikon LABOPHOT-2 optical microscope, fitted with Nikon Camera DS-Fi1. Furthermore, an in-depth electrical characterisation of the fabricated memory cells was carried out using HP4140B picoammeter.

Type
Articles
Copyright
Copyright © Materials Research Society 2018 

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References

REFERENCES

Hopkinson, N., Hague, R. and Dickens, P., Rapid Manufacturing: An Industrial Revolution for the Digital Age, 1st ed. (John Wiley and Sons, Ltd, West Sussex, UK, 2006), p. 249.Google Scholar
De Gans, B. J, and Schubert, U. S., Langmuir 20(18), 77897793 (2004).Google Scholar
Tekin, E., Smith, P. J. and Schubert, U. S., Soft Matter 4(4), 703713 (2008).Google Scholar
Perelaer, J., De Gans, B. J and Schubert, U. S., Adv Mater. 18(16), 21012104 (2006).Google Scholar
Chung, J., Ko, S., Bieri, N. R., Grigoropoulos, C. P. and Poulikakos, D., Appl. Phys. Lett. 84(5), 801803 (2004).Google Scholar
Ko, S. H., Chung, J., Hotz, N., Nam, K. H. and Grigoropoulos, C. P., J. Micromech Microeng. 20(12), (2010).CrossRefGoogle Scholar
De Gans, B. J., Duineveld, P. C. and Schubert, U. S., Adv. Mater 16(3), 203-213 (2004).Google Scholar
Jung, S., Sou, A., Gili, E. and Sirringhaus, H., Org. Electron. 14 (3), 699702 (2013).Google Scholar
Shimoda, T., Morii, K., Seki, S. and Kiguchi, H., MRS Bulletin 28(11), 821827 (2003).CrossRefGoogle Scholar
Lee, S. H, Hwang, J. Y., Kang, K. and Kang, H., ISOT 2009 -71-76 (2009).Google Scholar
Varela López, F., Diez, A. and Odriozola, A., Int. Polym. Proc. 22(1), 2732 (2007).Google Scholar
Singh, M., Haverinen, H. M., Dhagat, P. and Jabbour, G. E., Adv. Mater. 22(6), 673685 (2010).Google Scholar
Pillar Technologies: The Surface Tension Phenomenon. Available at: http://www.pillartech.com/Surface-Treatment/Technical-Info/Useful- Information/Surface-Tension-Phenomenon (accessed 20 February 2017).Google Scholar
Salaoru, I., Zhou, Z., Morris, P. and Gibbons, G. J., J. Appl. Polym. Sci. 133(25), 43572 (2016).Google Scholar
Hsiao, W.K., Hoath, S. D., Martin, G. D., Hutchings, I. M., Chilton, N. B. and Jones, S., Proc Nanotech 2011 Conference, Boston, June 2011.Google Scholar