Proceedings of Microscopy & Microanalysis 2012
Physical Science Symposium
Failure Analysis of Structural Materials-04
Research Article
Microstructure of TiAlNiAu ohmic contacts for N-polar GaN/AlGaN HEMTs
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- 23 November 2012, pp. 1802-1803
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Microscopy and Analysis of Quantum Structures and Devices-01
Research Article
Measurement of Composition and Strain by STEM
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- 23 November 2012, pp. 1804-1805
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FIB/TEM Investigation of crystallographic defects in type-II superlattice based infrared detectors
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- 23 November 2012, pp. 1806-1807
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Strain Analysis of Compositionally Tailored Interfaces in InAs/GaSb Superlattices by Aberration Corrected Transmission Electron Microscopy
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- 23 November 2012, pp. 1808-1809
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Scanning Probe Microscopy Based Characterizations of III-V Semiconductor Quantum Well Devices
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- 23 November 2012, pp. 1810-1811
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Microscopy and Analysis of Quantum Structures and Devices-02
Research Article
Charge Redistribution at ‘Polytype’ Heterojunctions in InAs(Sb) Nanopillars
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- 23 November 2012, pp. 1812-1813
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Origins of Electronic States in Semiconductor Nanostructures
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- 23 November 2012, pp. 1814-1815
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Cross-Sectional Characterization of Defects in GaN MQW LEDs
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- 23 November 2012, pp. 1816-1817
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Temperature dependence of Z-Contrast for InGaN
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- 23 November 2012, pp. 1818-1819
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Measurement of Indium-Content Variation in InGaN/GaN Dot-in-a-Wire Nanostructures by Electron Energy-Loss Spectroscopy
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- 23 November 2012, pp. 1820-1821
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Microscopy and Analysis of Quantum Structures and Devices-03
Research Article
Growth Mechanisms and Electronic Structure of Embedded ErAs and ErSb Nanostructures Studied by In-Situ Scanning Tunneling Microscopy
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- 23 November 2012, pp. 1822-1823
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Quantum confinement of Si nanocrystals in Si-rich nitrides
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- 23 November 2012, pp. 1824-1825
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Mapping the Electrostatic Profile Across Axial p-n Junctions in Si nanowires using Off-Axis Electron Holography
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- 23 November 2012, pp. 1826-1827
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Aberration Corrected HAADF-STEM of Ultrasmall Erbium Silicide Nanowires
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- 23 November 2012, pp. 1828-1829
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Dynamics and White Light Emission from CdSe Nanocrystals
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- 23 November 2012, pp. 1830-1831
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Microscopy and Analysis of Quantum Structures and Devices-04
Research Article
Quantifying polarization fields and sheet charge in III-nitride HEMT devices using off-axis electron holography
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- 23 November 2012, pp. 1832-1833
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Cathodoluminescence directly performed in a transmission electron microscope: nanoscale correlation of structural and optical properties
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- 23 November 2012, pp. 1834-1835
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Microcharacterization of GaN Nanomembranes Using Cathodoluminescence Microanalysis.
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- 23 November 2012, pp. 1836-1837
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Direct imaging of GaN Pyramids covered by InGaN Single Quantum Well using nano-scale Scanning Transmission Electron Microscopy Cathodoluminescence
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- 23 November 2012, pp. 1838-1839
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Characterization of optical properties of the dislocations in GaN films using transmission electron microscopy cathodoluminescence
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- 23 November 2012, pp. 1840-1841
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