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Oxidation in air of nitride bonded silicon carbide ceramic

Published online by Cambridge University Press:  15 June 2004

A. Zymla ,
V. Zymla ,
T. Pawlik ,
M. Sopicka-Lizer  and
J.-B. Guillot
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Abstract

The rate of air oxidation towards 1,000°C of the Si3N4-bonded silicon carbide refractory is low. It is found that the porous nitride-bonding phase oxidizes mainly and that the SiC oxidation is negligible. The decrease of specific surface area, due to the growing of a dense silica layer, induces much slower kinetics.

Type
Research Article
Information
Metallurgical Research & Technology , Volume 101 , Issue 5: Science et Génie des Matériaux , May 2004 , pp. 427 - 439
Copyright
© La Revue de Métallurgie, 2004

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