Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-14T09:30:00.003Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication, caractérisation et modélisation de micropoutres multimorphes intégrant un film piézoélectrique d'AlN comme actionneur

Published online by Cambridge University Press:  17 August 2007

Alexandru Andrei ,
Katarzyna Krupa ,
Michal Jozwik ,
Patrick Delobelle ,
Laurent Hirsinger ,
Christophe Gorecki ,
Lukasz Nieradko  and
Cathy Meunier
Alexandru Andrei
Affiliation:
LOPMD, FEMTO-ST, UMR CNRS 6174, Université de Franche-Comté, 16 route de Gray, 25000 Besançon, France
Katarzyna Krupa
Affiliation:
LOPMD, FEMTO-ST, UMR CNRS 6174, Université de Franche-Comté, 16 route de Gray, 25000 Besançon, France
Michal Jozwik
Affiliation:
Institute of Micromechanics and Photonics, Université de Technologie de Varsovie, 8 sw. A. Bokoli, 02.525 Varsovie, Pologne
Patrick Delobelle
Affiliation:
LMARC, FEMTO-ST, UMR CNRS 6174, Université de Franche-Comté, 24 chemin de l'Épitaphe, 25000 Besançon, France
Laurent Hirsinger
Affiliation:
LMARC, FEMTO-ST, UMR CNRS 6174, Université de Franche-Comté, 24 chemin de l'Épitaphe, 25000 Besançon, France
Christophe Gorecki
Affiliation:
LOPMD, FEMTO-ST, UMR CNRS 6174, Université de Franche-Comté, 16 route de Gray, 25000 Besançon, France
Lukasz Nieradko
Affiliation:
LOPMD, FEMTO-ST, UMR CNRS 6174, Université de Franche-Comté, 16 route de Gray, 25000 Besançon, France
Cathy Meunier
Affiliation:
CREST, FEMTO-ST, UMR CNRS 6174, Université de Franche-Comté, 4 place Tharradin, 25200 Montbéliard Cedex, France
Get access

Abstract

Cet article présente les potentialités de films d'AlN piézoélectriques comme éléments actionneurs pour les MEMS. Le cas de micropoutres constituées d'un empilement de différents films (électrode/AlN/électrode/substrat Si) est présenté. Un dispositif interférométrique de type Twyman-Green permet de quantifier précisément les déformées et les déplacements ce qui permet de calculer, à l'aide des équations non simplifiées, différentes grandeurs physiques des films d'AlN, par exemple le module d'Young lié à l'orientation (002) des cristallites, les contraintes résiduelles consécutives au mode d'élaboration, le coefficient de dilatation α ainsi que le coefficient piézoélectrique d31. On retrouve sensiblement les valeurs du matériau massif.

Keywords

Aluminium nitridethin filmresidual stresspiezoelectric coefficientNitrure d'aluminiumfilm mincecontrainte résiduellecoefficient piézoélectrique
Type
Research Article
Information
Mechanics & Industry , Volume 8 , Issue 3: Congrès Mécanique de Grenoble , May 2007 , pp. 267 - 278
Copyright
© AFM, EDP Sciences, 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Clement, M., Vergara, L., Sangrador, J., Iborra, E., Sanz-Hervas, A., SAW characteristics of AlN films sputtered on silicon substrates, Ultrasonics 42 (2004) 403–407 CrossRef
Palacios, T., Calle, F., Monroy, E., Grajal, J., Eickhoff, M., Ambacher, O., Prieto, C., Nanotechnology for SAW devices on AIN epilayers, Mat. Sci. and Eng. B 93 (2002) 154–158 CrossRef
Ju-Hyung Kim, Si-Hyung Lee, Jin-Ho Ahn, Jeon-Kook Lee, AlN piezoelectric materials for wireless communication thin film components, J. Ceram. Processing Research 3 (2002) 25–28
Lakin, K.M., Belsick, J., McDonald, J.F., McCarron, K.T., Improved bulk wave resonator coupling coefficient for wide bandwidth filters, IEEE Ultrasonics Symp. 9 (2001) 3E-5
Choujaa, A., Tirole, N., Bonjour, C., Martin, G., Hauden, D., Blint, P., Cachard, A., Pommier, C., AlN/silicon Lamb-wave microsensors for pressure and gravimetry measurements, Sens. and Actuators A 46–47 (1995) 179–182 CrossRef
Laurent, T., Bastien, F.O., Pommier, J.-C., Cachard, A., Remiens, D., Cattan, E., Lamb wave and plate mode in ZnO/silicon and AIN/silicon membrane, Application to sensors able to operate in contact with liquid, Sens. and Actuators A 87 (2000) 26–37 CrossRef
Ruffieux, D., Dubois, M.A., de Rooij, N.F., AIN, An piezoelectric microactuator array, IEEE MicroElectro Mech. Syst., Miyazaki, Japan, Jan. 23–27 (2000) 662–667
Dubois, M.A., Muralt, P., Properties of AlN thin films for piezoelectric transducers and microwave filter applications, Appl. Phys. Lett. 74 (1999) 3032–3034 CrossRef
Bargiel, S., Heinis, D., Gorecki, C., Gôrecka-Drzazga, A., Dziuban, J.A., Jôzwik, M., A micromachined silicon-based probe for a scanning near-field optical microscope on-chip, Measurement Sci. Techn. 17 (2006) 32–37 CrossRef
Ishihara, M., Li, S.J., Yumoto, H., Akashi, K., Control, Y. Ide of preferential orientation of AlN films prepared by the reactive sputtering method, Thin Solid Films 316 (1998) 152–157 CrossRef
Xu, X.H., Wu, H.S., Zhang, C.J., Jin, Z.H., Morphological properties of AlN piezoelectric thin films deposited by DC reactive magnetron sputtering, Thin Solid Films 388 (2001) 62–67 CrossRef
Akiyama, M., Xu, C.N., Nonaka, K., Shoku, K., Watonabe, T., Statistical approach for optimizing sputtering conditions of highly oriented aluminium nitride thin films, Thin Solid Films 315 (1998) 62–65 CrossRef
Kusaka, K., Taniguchi, D., Hanakusa, T., Tomiraga, K., Effect of input power on crystal orientation an residual stress in AlN film deposited by DC sputtering, Vacuum 59 (2000) 806–813 CrossRef
Auger, M.A., Vazquez, L., Jergel, M., Sanchez, O., Albella, J.M., Structure and morphology evolution of AlN films grown by DC sputtering, Surf. Coat. Techn. 180–181 (2004) 140–144 CrossRef
Pantojas, V.M., Otano-Rivera, W., Caraballe, J.W., Statistical analysis of the effect of deposition parameters on the preferred orientation of sputtered AlN films, Thin Solid Films 492 (2005) 118–123 CrossRef
C. Gorecki, M. Jôzwik, L. Salbut, Multifunctional interferometric platform for on-chip testing the micromechanical properties of MEMS/MOEMS, J. Microlithography, Microfabrication, and Microsystems 4 (2005), 1–10
Salbut, L., Patorski, K., Jôzwik, M., Kacperski, J., Gorecki, C., Jacobelli, A., Dean, T., Active microelement testing by interferometry using time-average and quasi-stroboscopic techniques, SPIE Microsystems Eng.: Metrology and Inspection III 5145 (2003) 23–32
Oliver, W.C., Pharr, G.M., An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments, J. Mater. Res. 1 (1992) 1564–1583 CrossRef
Bobji, M.S., Biswas, S.K., Hardness of a surface containing uniformly spaced pyramidal asperities, Trib. Lett. 7 (1999) 51–56 CrossRef
Qasmi, M., Delobelle, P., Influence of the average roughness R ms on the precision of the Young's modulus and hardness determination using nano-indentation technique with a Berkovich indenter, Surf. Coat. Techn. 201 (2006) 1191–1199 CrossRef
Stoney, G.G., The tension of metallic films deposited by electrolysis, Proc. R. Soc. London Serie A 82 (1909) 172 CrossRef
K. Röll, Analysis of stress and strain distribution in thin films and substrates, J. Appl. Phys. 47 (7) (1976) 3224–3229
Townsend, P.H., Barnett, D.M., Brunner, T.A., Elastic relationships in layered composite media with approximation for the case of thin films on a thick substrate, J. Appl. Phys. 62 (1987) 4438–4444 CrossRef
Jou, J.H., Hsu, L., Stress analysis of elastically anisotropic bilayer structures, J. Appl. Phys. 69 (1991) 1384–1388 CrossRef
Smits, J.G., Choi, W.S., The constituent equations of piezoelectric heterogeneous bimorphs, IEEE Trans. Ultrasonics, Ferroelectrics and Frequency Control 38 (1991) 256–270 CrossRef
Wang, Q.M., Cross, L.E., Constitutive equations of symmetrical triple layer piezoelectric benders, IEEE Trans. Ultrasonics, Ferroelectrics and Frequency Control 46 (1999) 1343–1351
Yao, K., Zhu, W., Uchino, K., Zhang, Z., Lim, L.C., Design and fabrication of a high performance multilayer piezoelectric actuator with bending deformation, IEEE Trans. Ultrasonics, Ferroelectrics and Frequency Control 46 (1999) 1020–1027
Chang, S.H., Chou, C.C., Electromechanical analysis of an asymmetric piezoelectric elastic laminate structure: Theory and experiment, IEEE Trans. Ultrasonics, Ferroelectrics and Frequency Control 46 (1999) 441–451
V. Walter, Thesis Univ. Franche-Comté, Caractérisation et modélisation électromécanique de dépots de couches épaisses sérigraphiées sur substrat d'alumine, Application au contrôle de forme et à l'amortissement actif d'un bimorphe, 2001
Walter, V., Delobelle, P., Le Moal, P., Joseph, E., Collet, E., A piezo-mechanical characterization of PZT thick films screen-printed on alumina substrate, Sens. and Actuators A 96 (2002) 157–166 CrossRef
Vlassak, J.J., Nix, W.D., Measuring the elastic properties of anisotropic materials by means of indentation experiments, J. Mech. Phys. Sol. 42 (1994) 1223-1245 CrossRef
Vlassak, J.J., Nix, W.D., Indentation modulus of elastically anisotropic half-spaces, Phil. Magn. A 67 (1993) 1045–1056 CrossRef
Delafargue, A., Ulm, F.J., Explicit approximations of the indentation modulus of elastically orthotropic solids for conical indenters, Int. J. Solids Struct. 41 (2004) 7351–7360 CrossRef
Delobelle, P., Fribourg-Blanc, E., Remiens, D., Mechanical properties determined by nanoindentation tests of PZT and PMNT sputtered thin films, Thin Solid Films 515 (2006) 1385–1393 CrossRef
Carlotti, G., Hickernell, F.S., Liaw, H.M., Palmieri, L., Socino, G., Verona, E., The elastic constants of sputtered aluminium nitride films, IEEE Ultrasonics Symp. 1 (1995) 353–356
Tsubouchi, K., Sugai, K., Mikoshida, N., AIN material constants evaluation and SAW properties on AlN/Al203 and AlN/Si, IEEE Ultrasonics Symp. 1 (1981) 375–380
Wright, A.F., Elastic properties of zinc-blende and wurtzite AIN, GaN and InN, J. Appl. Phys. 82 (1997) 2833–2839 CrossRef
L. Robert, P. Delobelle, Internal report, unpublished work, 2001
King, R.B., Elastic analysis of some punch problems for layered medium, Int. J. Solids Struct. 23 (1987) 1657–1664 CrossRef
Saha, R., Nix, W.D., Effects of the substrate on the determination of thin film mechanical properties by nano-indentation, Acta Mater. 50 (2002) 23–28 CrossRef
Xue, Z., Huang, Y., Hwang, K.C., The, M. Li influence of indenter tip radius on the micro-indentation hardness, J. Eng. Mat. Techn. 124 (2002) 371–379 CrossRef
Wang, Q.M., Ding, Y., Chen, Q., Zhao, M., Cheng, J., Crystalline orientation dependence of nanomechanical properties of Pb (Zr Ti) 03 thin films, Appl. Phys. Lett. 86 (2005) 162903 CrossRef
Delobelle, P., Wang, G.S., Fribourg-Blanc, E., Remiens, D., Indentation modulus and hardness of Pb (Zr Ti) 03 sol-gel films deposited on Pt and LuNi03 electrodes. An estimation of the C ij compliances, J. Europ. Ceram. Soc. 27 (2007) 223–230 CrossRef
Xiao, W., Jiang, X., Optical and mechanical properties of nanocrystalline aluminium oxynitride films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition, J. Crystal Growth 264 (2004) 165–171 CrossRef
S. Dagdag, J. Alexis, J.D. Beguin, J.A. Petit, M. Ferrato, J. Durand, Propriétés mécaniques de revêtements d'AlN sur carbure de silicium fritté par dépôt chimique en phase vapeur assisté plasma, Matériaux 2006, 13–17 Nov. 2006, Dijon, France
Meng, W.J., Sell, J.A., Eesley, G.L., Perry, T.A., Measurement of intrinsic stresses during growth of aluminium nitride thin films by reactive sputter deposition, J. Appl. Phys. 74 (1993) 2411–2414 CrossRef
A. Andrei, K. Krupa, M. Jozwik, L. Nieradko, C. Gorecki, L. Hirsinger, P. Delobelle, Fabrication, characterization and reliability study of AlN driven cantilevers, Proc. of SPIE, vol. 6188 April 2006, Strasbourg
www.ceramic_center.com/cttc_pdf/nitrure_al.pdf
MEMS and Nanotechnology Clearinghouse, www.memsnet.org/material/aluminiumnitride, MEMS Exchange (2001)
Guy, L.L., Muensit, S., Goldys, E.M., Extensional piezoelectric coefficients of gallium nitride and aluminium nitride, Appl. Phys. Lett. 75 (1999) 4133–4135 CrossRef
Lueng, C.M., Chan, H.L.W., Surya, S., Choi, C.L., Piezoelectric coefficient of aluminium nitride and gallium nitride, J. Appl. Phys. 88 (2000) 5360–5363 CrossRef
Ho, C.J., Shing, T.K., Preferred, P.C. Li orientation control and characterization of AlN thin films using reactive sputtering, J. Mat. Sci. and Eng. 7 (2004) 1–4