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The model of the influence of the electron refluxing on the electron transport and K α emission

Published online by Cambridge University Press:  07 August 2017

J.C. Zhao ,
L.H. Cao ,
J.H. Zheng ,
Z.Q. Zhao ,
Z.J. Liu ,
C.Y. Zheng ,
H. Zhang ,
Y.Q. Gu  and
J. Liu
J.C. Zhao
Affiliation:
School of Physics, Beijing Institute of Technology, Beijing 100081, China Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
L.H. Cao*
Affiliation:
Institute of Applied Physics and Computational Mathematics, Beijing 100088, China Center for Applied Physics and Technology, Peking University, Beijing 100871, China Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai 200240, China
J.H. Zheng
Affiliation:
Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China
Z.Q. Zhao
Affiliation:
Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China
Z.J. Liu
Affiliation:
Institute of Applied Physics and Computational Mathematics, Beijing 100088, China Center for Applied Physics and Technology, Peking University, Beijing 100871, China
C.Y. Zheng
Affiliation:
Institute of Applied Physics and Computational Mathematics, Beijing 100088, China Center for Applied Physics and Technology, Peking University, Beijing 100871, China Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai 200240, China
H. Zhang
Affiliation:
Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
Y.Q. Gu
Affiliation:
Center for Applied Physics and Technology, Peking University, Beijing 100871, China Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai 200240, China Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China
J. Liu*
Affiliation:
Institute of Applied Physics and Computational Mathematics, Beijing 100088, China Center for Applied Physics and Technology, Peking University, Beijing 100871, China Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai 200240, China
*
Address correspondence and reprint requests to: L.H. Cao and J. Liu, Institute of Applied Physics and Computational Mathematics, Beijing 100088, China. E-mail: [email protected] and [email protected]
Address correspondence and reprint requests to: L.H. Cao and J. Liu, Institute of Applied Physics and Computational Mathematics, Beijing 100088, China. E-mail: [email protected] and [email protected]
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Abstract

In our previous research (Zhao et al., 2016), we focus on the transport processes from hot electrons to K α X-ray emission in a copper foil and nanobrush target when the electron refluxing effect is not taken into account. In this work, considering the refluxing effect, the transport of hot electrons in a solid target is studied by adding the electric fields both at the front and rear surfaces of the target with Monte Carlo code Geant4. Simulation results show that the electron refluxing has an important influence on K α photon yield and the size of K α radiation source. K α yield from the 10-μm-thick target with the electron refluxing effect is 2.7–3.7 times more than that without the refluxing for the electron temperatures from 0.4 to 1.4 MeV. The laser-to-K α photon energy conversion efficiency ${\rm \eta} _{L \to K_{\rm \alpha}} $ with the refluxing effect is always higher than that without the refluxing, and both of them decrease gradually with laser strength Iλ2. Considering the electron refluxing effect or not, the variations of K α yield with the target thickness d are very different. A critical thickness of the target d c (~30 μm) is achieved to confirm whether the refluxing effect is valid for the target. For the target with the thickness d less than d c, the refluxing effect can enhance K α yield with several times, while for the target with the thickness d larger than d c, the refluxing effect is not so effective. The full-width at half-maximum increases from 23 to 56 µm after including the refluxing effect by the electron beam with the radius of 10 µm and the temperature of 400 keV.

Keywords

Adding electric fieldsElectron refluxingGeant4K α emission
Type
Research Article
Information
Laser and Particle Beams , Volume 35 , Issue 3 , September 2017 , pp. 483 - 491
Copyright
Copyright © Cambridge University Press 2017 

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References

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