Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-18T07:21:06.412Z Has data issue: false hasContentIssue false
  • English
  • Français

Time resolved imaging studies of the plasma produced by laser ablation of silicon in O2/Ar atmosphere

Published online by Cambridge University Press:  07 June 2005

S. TRUSSO ,
E. BARLETTA ,
F. BARRECA ,
E. FAZIO  and
F. NERI
S. TRUSSO
Affiliation:
CNR-Istituto per i Processi Chimico-Fisici, Sez. di Messina, Messina, Italy
E. BARLETTA
Affiliation:
Dipartimento di Fisica della Materia e Tecnologie Fisiche Avanzate, Università di Messina, Messina, Italy
F. BARRECA
Affiliation:
Dipartimento di Fisica della Materia e Tecnologie Fisiche Avanzate, Università di Messina, Messina, Italy
E. FAZIO
Affiliation:
Dipartimento di Fisica della Materia e Tecnologie Fisiche Avanzate, Università di Messina, Messina, Italy
F. NERI
Affiliation:
Dipartimento di Fisica della Materia e Tecnologie Fisiche Avanzate, Università di Messina, Messina, Italy
Get access Rights & Permissions [Opens in a new window]

Abstract

The dynamics of the expansion plasma produced by excimer laser ablation of a silicon target into oxygen and mixed O2/Ar atmosphere were studied by means of time-resolved imaging of the expanding plume. Experiments were performed in pure oxygen, ranging between 0.13 and 13.33 Pa, and at different O2/Ar ratios at a fixed total pressure of 13.33 Pa. The occurrence of a shock wave (SW) generated by the supersonic expansion of the plasma was observed at high pressure values. The presence of the SW had a strong influence on the structure of SiOx thin films. In fact, silicon dioxide thin films were always obtained in presence of the SW, irrespective of the oxygen content in the gaseous mixture. On the contrary, suboxide thin films were obtained when the expansion occurred at lower pressure values (no SW presence). The temperature rise following the developing of the SW, is supposed to enhance the oxygen molecules dissociation by increasing the efficiency of the silicon oxidation reaction.

Keywords

Laser ablationPlasma spectroscopySiOxThin solid films shock-wave
Type
Research Article
Information
Laser and Particle Beams , Volume 23 , Issue 2 , June 2005 , pp. 149 - 153
Copyright
2005 Cambridge University Press

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

This paper was presented at the 28th ECLIM conference in Rome, Italy.

References

REFERENCES

Arnold, N., Gruber, J. & Heitz, J. (1999). Spherical expansion of the vapor plume into ambient gas: an analytical model. Appl. Physics A 69, S87.Google Scholar
Batani, D. & Wooton, A.J. (2004). International conference on ultrashort high-energy radiation and matter. Laser Part. Beams 22, 197.CrossRefGoogle Scholar
Desai, T. (2003). International conference on the frontiers of plasma science. Laser Part. Beams 21, 479.CrossRefGoogle Scholar
Desbiens, E., Dolbec, R. & El Khakani, M.A. (2002). Reactive pulsed laser deposition of high-k silicon dioxide and silicon oxynitride thin films for gate-dielectric applications. J. Vac. Sci. Technol. A 20, 1157.Google Scholar
Fazio, E., Barletta, E., Barreca, F., Neri, F. & Trusso, S. (2004). Investigation of a nanocrystalline silicon phase embedded in SiOx thin films grown by pulsed laser deposition. J. Vac. Sci. Technol. B (in press).Google Scholar
Gamaly, E.G., Rode, A.V. & Luther-Davies B. (2000). Formation of diamond-like carbon films and carbon foam by ultrafast laser ablation. Laser Part. Beams 18, 245.CrossRefGoogle Scholar
Honrubia, J. & Tikhonchuk, V. (2004). Workshop on simulation of ultra intense laser beams interaction with matter. Laser Part. Beams 22, 95.CrossRefGoogle Scholar
Lackner, J.M., Waldhauser, W., Ebner, R., Lenz, W., Suess, C., Jakopic, G., Leising, G. & Hutter, H. (2003). Pulsed laser deposition: a new technique for deposition of amorphous SiOx thin films. Surf. Coat. 163–164, 300.CrossRefGoogle Scholar
Landau, L.D. & Lifshitz, E.M. (1987). Fluid Mechanics 2nd edn., Oxford: Pergamon Press.
Montero, I., GalÁn, L., Najmi, O. & Albella, J.M. (1994). Disorder-induced vibration-mode coupling in SiO2 films observed under normal-incidence infrared radiation. Phys. Rev. B 50, 4881.Google Scholar
Pai, P.G., Chao, S. S., Takagi, Y. & Lucovsky, G. (1986). Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor deposition. J. Vac. Sci. Technol. A 4, 689Google Scholar
Ramirez, J., Ramis, R. & Sanz, J. (2004). One dimensional model for laser-ablated slab under acceleration. Laser Part. Beams 22, 183.CrossRefGoogle Scholar
Schilling, O. (2003). International workshop on the physics of compressible turbulent mixing. Laser Part. Beams 21, 301.CrossRefGoogle Scholar
Trusso, S., Barletta, E., Barreca, F. & Neri, F. (2004). Pulsed laser ablation of SiC in a nitrogen atmosphere: Formation of CN. Appl. Physics A 79, 1997.CrossRefGoogle Scholar
Zel'dowich, Y.B. & Raizer, Y.P. (1966). Physics of Shock Waves and High Temperature Hydrodynamic Phenomena, New York: Academic Press.