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Growth of amorphous carbon and graphene on pulse laser deposited SiC films and their characterization studies

Published online by Cambridge University Press:  12 December 2012

Pratima K. Mishra  and
Bijayalaxmi Sahoo
Pratima K. Mishra*
Affiliation:
Institute of Minerals and Materials Technology (CSIR-IMMT), Bhubaneswar, Orissa, India
Bijayalaxmi Sahoo
Affiliation:
Institute of Minerals and Materials Technology (CSIR-IMMT), Bhubaneswar, Orissa, India
*
Address correspondence and reprint requests to: Pratima K. Mishra, Advance Materials Technology Department, Institute of Minerals and Materials Technology (CSIR-IMMT), Bhubaneswar-751013, Orissa, India. E-mail: [email protected]
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Abstract

Laser induced ablation studies have been carried out on formation of amorphous carbon and graphene on SiC thin films with their detailed characterization studies. Pulse laser ablation technique with process parameters such as 248 nm KrF excimer laser, frequency 10 Hz, 200 mJ of laser energy, and chamber pressure of 7 × 10−6 mbar has been used. Films were characterized in detail by grazing incidence X-ray diffraction, Fourier transform infrared, micro-Raman, X-ray reflectivity, Field emission scanning electron microscopic, transmission electron microscope, and Nano-indentation techniques and the results are reported. As deposited SiC film surface is rich in amorphous carbon and the same has been used as the nucleation site for further growth of graphene on SiC films. Film hardness increased from 29 GPa to 37 GPa for SiC film and graphene on SiC film (C-SiC), respectively. These films show bands due to surface phonon polariton mode in the range of 810–840 cm−1 that is a research concern today in nano-photonics area. Further these materials find applications in understanding the laser irradiation effects on SiC based nuclear fusion wall material.

Keywords

Amorphous carbonCharacterizationGraphenePulse laser ablationSilicon carbide thin film
Type
Research Article
Information
Laser and Particle Beams , Volume 31 , Issue 1 , March 2013 , pp. 63 - 71
Copyright
Copyright © Cambridge University Press 2012

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