Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-17T07:19:01.421Z Has data issue: false hasContentIssue false
  • English
  • Français

Developing a Mini-Impact System for Measuring Silicon Wafer's Elastodynamic Response

Published online by Cambridge University Press:  05 May 2011

S. T. Jenq ,
T. S. Leu ,
Y. G. Su ,
J. S. Lee  and
G. C. Hwang
S. T. Jenq*
Affiliation:
Institute of Aeronautics and Astronautics, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.
T. S. Leu*
Affiliation:
Institute of Aeronautics and Astronautics, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.
Y. G. Su*
Affiliation:
Institute of Aeronautics and Astronautics, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.
J. S. Lee*
Affiliation:
Chung Sun Institute of Science & Technology, Taoyuan, Taiwan 325, R.O.C.
G. C. Hwang*
Affiliation:
Chung Sun Institute of Science & Technology, Taoyuan, Taiwan 325, R.O.C.
*
* Professor
** Assistant Professor
*** Graduate Assistant
**** Senior Engineer
**** Senior Engineer
Get access

Abstract

The purpose of this work is to study the dynamic mechanical response of silicon wafer subjected to low-velocity impact loading. Transient finite element analysis was utilized to obtain the numerical simulated result and was used to check against the experimental findings. Good relationship between each other was observed. A pair of polysilicon microsensors manufactured by the micro-fabrication technique was directly fabricated on the surface of silicon wafer so as to detect the impact induced dynamic strain. A series of low-velocity impact tests utilizing the home-made drop-weight mini-tower tester was conducted. These test results were used to examine the accuracy and adequacy of the current micro strain sensors for stress wave propagation measurements. It is concluded that the difference between the present measured wave speed and the one-dimensional longitudinal wave speed under conditions of plane strain were determined to be within 5.6% for the present low-speed impact problem. A maximum of 10.9% deviation between the test determined elastic modulus and a reference value (16) of 130 GPa was found based on a series of impact test results. In addition, a difference of 2% error was reported when we compared the test detected peak stress value after impact initiated (before wave is reflected from the boundary) and the corresponding numerical simulated response.

Keywords

MicrosensorsSiliconImpact responseMEMSStrain sensorDynamic elastic property
Type
Articles
Information
Journal of Mechanics , Volume 21 , Issue 1 , March 2005 , pp. 33 - 39
Copyright
Copyright © The Society of Theoretical and Applied Mechanics, R.O.C. 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Madou, Marc, Fundamentals of Microfabrication, CRC Press, LLC, Boca Raton, Florida (1997).Google Scholar
2.Campbell, , Stephen, A., The Science and Engineering of Microelectronic Fabrication, Oxford University Press, Inc., New York, NY (2001).Google Scholar
3.Pfann, W. G. and Thurston, R. N., “Semiconducting stress transducers utilizing the transverse and shear piezoresistance effects,” J. Appl. Phys., Vol. 32, pp. 2008–2016 (1961).Google Scholar
4.Obermeier, E. and Kopystynski, P., “Polysilicon as a material for microsensor applications,” Sensors and Actuators, A., Vol. 30, pp. 149–155 (1991).Google Scholar
5.Gridchin, V. A., Lubimsky, V. M., and Sarina, M. P., “Piezoresistive properties of polysilicon films,” Sensors and Actuators, A., Vol. 49, pp. 67–72 (1995).Google Scholar
6.Laghla, Y., Scheid, E., Vergnes, H., and Couferc, J. P., “Electronic properties and microstructure of undoped, and B- or P-doped poly-silicon deposited by LPCVD,” Solar Energy Materials and Solar Cells, Vol. 48, pp. 303–314 (1997).Google Scholar
7.Bromley, S. C., Howell, L. L. and Jensen, B. D., “Determination of maximum allowable strain for poly-silicon micro-devices,” Engineering Failure Analysis, Vol. 6, pp. 27–41 (1999).Google Scholar
8.French, P. J., “Polysilicon: a versatile material for microsystems,” Sensors and Actuators, A., Vol. 99, pp. 3–12 (2002).Google Scholar
9.Jenq, S. T. and Sheu, S. L., “An experimental and numerical analysis for high strain rate compressional behavior for 6061–0 aluminum alloy,” Computers & Structures, Vol. 52, No. 1, pp. 27–34 (1994).Google Scholar
10.Dharan, C. K. H. and Hauser, F. E., “Techniques for measuring stress-strain relations at high strain rates,” Experimental Mechanics, Vol. 6, pp. 395–402 (1966).Google Scholar
11.Jenq, S. T. and Chang, C. C., “Characterization of piezo-film sensors for direct vibration and impact measurements,” Experimental Mechanics, Vol. 35, No. 3, pp. 224–232 (1995).Google Scholar
12.Jenq, S. T. and Mo, J. J., “Ballistic impact response for two-step braided three-dimensional textile composites,” AIAA Journal, Vol. 34, No. 2, pp. 375–384 (1996).Google Scholar
13.Jenq, S. T. and Sheu, S. L., “High strain rate compressional behavior of stitched and unstitched composite laminates with radial constraint,” Composite Structures, Vol. 25, pp. 427–438 (1993).CrossRefGoogle Scholar
14.Jeager, R. C., Introduction to Microelectronics Fabrication, Addison-Wesley, Boston, MA (1998).Google Scholar
15.Su, Y. G., “Design and microfabrication of an instrumented mini-impact system,” M.S. Thesis, National Cheng Kung University, Tainan, Taiwan (2002).Google Scholar
16.Sze, S. M., Semiconductor Sensors, Appendix D, John Wiley & Sons, Inc., New York, NY (1994).Google Scholar