Using several measured and calculated physical properties, we argue that the high-Tc metal-oxide superconductor Y1Ba2Cu3O7 is elastically soft compared with BaTiO3 or SrTiO3. We conclude that the bulk modulus equals approximately 107 GPa, despite several high-pressure x-ray diffraction studies that report values up to approximately 200 GPa. Part of the argument uses an ionic-crystal-model calculation of the bulk modulus.

A phase with a glassy appearance has been detected in samples of the Tl–Ca–Ba–Cu system. The presence of such a phase is expected to have a negative effect on the critical current density in a bulk superconductor. Samples of 2-2–2-3 starting composition were prepared from Tl2O3, BaO2, and relatively large particles of CaO and CuO. These samples were then heat-treated at 867°C for various periods of time. The use of large particles of CaO and CuO facilitates the examination of the morphological changes associated with the formation of the superconducting phases. Using scanning electron microscopy, a layer of the 2122 phase was found to form on the surface of the large CaO particles whereas near the surface of the large CuO particles, large voids were observed. By varying some of the experimental conditions, a liquid phase with a composition close to 2-0–2-3 was inferred to form. The voids observed in the surroundings of the CuO particles may be due to the formation of such a melt. This liquid phase, after cooling, apparently leads to the “glassy” phase detected in the reacted samples. This glassy phase may play a role as an intermediate in the formation of the 2122 phase, which could result by a direct reaction between the liquid phase and CaO, A part may remain, however, among the superconducting grains, thus having a negative effect on the critical current density.

The structure and microstructure of a solid state processed Pb-Sr-Ca-Er-Cu-O superconductor have been investigated by transmission electron microscopy. In addition to the majority superconducting phase, at least two other impurity phases have been observed. The superconducting phase is a layered structure similar to the Bi2Sr2CaCu2Oy compound, with an extra Cu atom between the two PbO layers. Stacking defects inside the grain have been observed. A grain boundary amorphous phase has also been observed. The steps in the resistivity-temperature plot and the consequent absence of Tc,0 above 8 K are attributed to either the presence of the Pb2Sr2Cu2Oy unit cell at the grain boundary and/or a local enrichment of oxygen at the grain boundaries. Superlattice spots in the [100] zone axis diffraction patterns from regions enriched in Ca and Er with respect to the nominal composition are interpreted as due to ordering of Sr and Ca/Er in the Sr sites.

We have prepared BiSrCaCuO superconducting thin films by the pulsed laser evaporation method, using a YAG or an ArF excimer laser. The as-deposited films, which were enriched in Cu with respect to the bulk target composition Bi2Sr2Ca1Cu2O8 (i.e., the “2212” phase), were converted into the superconducting phase by a subsequent high temperature annealing in oxygen. Resistivity measurements showed superconducting transitions near 90 K, and the highest zero resistivity temperature was 83 K. The influence of the deposition parameters (photon wavelength) and annealing conditions (temperature, duration, and atmosphere) have been studied. The composition and in-depth distribution of the various elements were determined by Rutherford backscattering spectrometry (RBS), and the surface morphology was studied by scanning electron microscopy (SEM).

Surface hardening of SUS304 resulting from the process of doping and deposition of Si by irradiation of a KrF excimer laser beam in a SiH4 gas ambient is investigated, and variations of the surface hardness are examined for different numbers of laser pulses and the laser fluences. The hardening is due to Si incorporation in high concentration. The continuous distribution of Si atoms across the surface layer suggests that a very high adhesion strength of the deposited Si films can be formed. The specific process for surface modification is referred to as laser implant-deposition (LID).

An attempt has been made to improve the high temperature mechanical strength of the B2 cubic crystal structure intermetallic NiAl by dispersion strengthening. Prealloyed Ni–51 (at.%) Al was cryomilled with a Y2O3 addition to form an yttria dispersoid within the intermetallic matrix. Following milling, the powder was hot extruded to full density and machined into test coupons. Compression testing between 1200 and 1400 K indicated that the cryogenic process yielded the strongest NiAl based material tested to date: creep resistance was six times better than NiAl and twice that of a NiAl particulate composite containing 10 vol.% TiB2. Surprisingly, transmission electron microscopy revealed that the second phase was inhomogeneously distributed. Furthermore, x-ray analysis indicated that the second phase was not Y2O3 but rather AIN.

Transformation of boehmitc-derived alumina gel to α–Al2O3 in unseeded gels is strongly influenced by the parent phase, θ-Al2O3. In seeded gels the perfect structure of the epitaxial substrate (α–Al2O3, 0.3 wt. %) influences the surrounding defect θ-phase resulting in (a) fewer imperfections due to lower transformation enthalpy to α–Al2O3, and (b) multiple nucleation sites of α–Al2O3 at the α–Al2O3 seed surface. The rate of transformation expressed for the same number of α–Al2O3 nuclei in unseeded and seeded gels indicates that it is faster in the unseeded gel than in the seeded gel.

A thermodynamics-based description, in the form of an extended phase diagram, of melting and solid-state amorphization is proposed which brings out the parallels between these two phenomena and suggests that their underlying causes are apparently the same. Through molecular dynamics simulations we demonstrate that every crystal, in principle, can undergo two different types of melting transitions with characteristic features that are also observed in radiation- and hydrogenation-induced amorphization experiments on ordered alloys. The first type, defined in terms of free energies, is shown to involve the heterogeneous nucleation of the liquid or amorphous phase at extended lattice defects (such as grain boundaries, free surfaces, voids, or dislocations) and subsequent thermally-activated propagation of solid-liquid/amorphous interfaces through the crystal. The second type, arising from a mechanical instability limit described by Born, is homogeneous and does not require thermally-activated atom mobility. It is suggested that the role of chemical and structural disordering, a prerequisite for irradiation- but not hydrogenation-induced solid-state amorphization, is merely to drive the crystal lattice to a critical combination of volume and temperature at which the amorphous phase can form either heterogeneously or homogeneously.

A new method for the shock consolidation of hard metallic powders has been successfully tested. This method extends the process developed by Sawaoka and Akashi for the processing of ceramics (U.S. Patent 4,655,830) to metallic powders. Shock-activated reactions between elemental mixtures of niobium and aluminum powders were used to chemically induce bonding between difficult-to-consolidate intermetallic TiAl compound powder particles. The highly exothermic reactions activated by the passage of shock waves form an intermetallic binder phase which assists in the consolidation of the very hard TiAl alloy powders. Shock impact experiments were carried out utilizing a twelve-capsule shock recovery system in which a plane wave generating lens is used for accelerating a flyer plate to velocities of 1.7 and 2.3 km/s. With these impact velocities, sufficient shock pressures are generated in the powders, contained in capsules, to result in shock-induced reactions between the elemental powders of the mix. Fully dense compacts were successfully recovered and were subsequently characterized by optical, transmission, and scanning electron microscopy, x-ray diffraction, and microhardness testing. Transmission electron microscopy revealed both microcrystalline and amorphous regions in the reaction zone. In one instance, the amorphous material crystallized under the heating effect of the electron beam. Shock induced reaction between elemental powders and with the TiAl powders, producing ternary compounds, was also observed.

The atomic configuration at the tip of a mode 1 crack in aluminum is modeled by means of molecular dynamics calculations using an embedded atom potential. This potential intrinsically incorporates many-body contributions. This paper is concerned with the characteristics of the atomic displacement fields in comparison to the linear elastic predictions and dislocation emission phenomena. Three crack/crystal orientations are examined in which the crack plane–crack propagation directions are (010)-[100], (10)-[110], and (10)-[111]. The first two models behaved in a brittle fashion as dislocation emission did not occur for reasons associated with the use of periodic boundary conditions parallel to the crack front. For the models which remained atomically sharp, the positions of the atoms near the crack tip in equilibrium configurations are different from the linear elastic predictions but, to first order, retain an r1/2 dependence, with smaller K, and with the origin displaced behind the physical crack tip. This near tip region is also observed to be elastically softer than in the far field. Dislocation emission readily proceeds in the (10)-[111] model by the sequential emission of partials with attendant nonzero uz displacements. The blunting is characterized by the creation of two corner defects that separate as emission occurs and relaxation of the strains in the region initially confronted by the crack tip. Additional features of the results are discussed.

Mixtures of Ge–Sn and Ge–Pb powders were ball-milled to form a fine dispersion. After 32 h of milling the average diameter of the hard Ge particles embedded in the Sn (or Pb) matrix was about 10 nm. As the Ge concentration was increased in each system, the melting point, TM, and the enthalpy of fusion, ΔHM, of Sn (or Pb) decreased. Only small changes in ΔTM and ΔHM were observed after heating cycles in the DSC to above the melting point. The melting endotherm measured by DSC disappeared for Ge-rich compositions (88 and 95 vol.% Ge for Ge–Sn; 93.5 vol.% Ge for Ge–Pb). It is suggested that atomic disorder/melting is nucleated at the Ge/Sn (or Ge/Pb) interfaces and the melting point and enthalpy of fusion decrease as the interfacial area increases. When the Ge volume reaches a value where essentially all the Sn (or Pb) atoms are adjacent to the Ge particle surfaces, the Sn is in a disordered–perhaps amorphous–state such that no melting transition is observed.

The Al–Ni2Si reactions were studied in lateral diffusion couples containing Al islands on Ni–Si multiple layers. The samples were first in situ annealed in a transmission electron microscope at a temperature of 370°C for 5 min to form the Ni2Si phase in the multiple-layer area. Then they were in situ annealed at temperatures ranging from 498–545 °C. During the second-step anneal, a sequential formation of Al3Ni, Al3Ni2, and Ni3Si2 was observed. After the nucleation of the third phase (Ni3Si2), the three phases grew simultaneously with time. The lateral growth of Al3Ni and Al3Ni2 is a result of the Al diffusion and the Al–Ni silicide reactions; the lateral growth of Ni3Si2 is caused by the diffusion of Si atoms dissociated from the silicides.

Although amorphous alloys are known to be good diffusion barriers, amorphous nickel-zirconium is shown to react with Si at relatively low temperatures. Diffusion of Ni at 350°C through an amorphous Ni–Zr buffer layer leads to the formation of epitaxial NiSi2 on single crystal silicon substrates. Interplay of mobility and thermodynamics is applicable for epitaxial silicide nucleation and growth. Also, a one-step annealing process in oxygen ambient leads to bilayer formation of NiSi2/ZrO2 structures on silicon substrates.

Compositional analysis of thin nanoscale native oxide films formed on {001} silicon wafer surfaces at room temperature was done with an electron energy loss spectrometer coupled to an analytical electron microscope having a field emission source, with better than 4 nm spatial resolution. The electron energy loss spectra show a shift in the threshold onset energy of the Si–L edge of the native oxide from ∼99 eV loss corresponding to pure elemental silicon to ∼105 eV loss, and elemental analysis using the ionization regions of the core loss edges showed the composition to be SiO, within a few percent. Microdiffraction and high resolution electron microscopy (HREM) results showed that the native oxide was completely amorphous, and did not contain detectable nanocrystals. The native oxide can be removed from the Si surface by heating in UHV for a short time at 1000 °C. However, this procedure resulted in the formation of small amounts of a crystalline phase on the Si wafer surface, which was shown to be β-SiC by the same methods.

Buried amorphous layers were produced by implantation of MeV Si+ ions in silicon single crystal at room temperature and liquid nitrogen temperature. The damage is characterized structurally both in the as-implanted condition and after post-implantation furnace annealing. Growth of the amorphous layer during room temperature implantation is found to occur by a layer-by-layer mechanism with relatively sharp interfacial transition regions. A wide region ahead of the buried amorphous region extending to the surface is observed to be free of any extended defects. Recrystallization of the damaged region during thermal annealing occurs by solid-phase epitaxial growth at both interfaces. A lower growth velocity is found at the upper interface, which is attributed to a higher hairpin dislocation density grown-in at this interface. Results of irradiation at liquid nitrogen temperature, on the other hand, show that nucleation and growth of the amorphous damage occurs over a wide region and is not confined to the interfacial region. This results in a very diffuse upper interface composed of a mixture of amorphous and crystalline phases. Substantial reordering is observed in this mixed-phase region after 400°C annealing, even though this temperature is too low for normal interfacial solid-phase epitaxial growth. Cross-sectional transmission electron microscopy, as well as Rutherford backscattering spectroscopy, were used in this study.

Dopant induced grain growth in LPCVD polysilicon films has been investigated using BBr3 as the diffusion source at 900 and 950 °C. TEM and sheet resistance measurements indicate rapid growth under such doping conditions. Results are compared with the grain growth observed during (a) PBr3 doping of similar films, and (b) during anneals in ambients containing 1% oxygen in nitrogen, similar to that used during BBr3 or PBr3 doping. The results clearly demonstrate the rapid grain growth induced by both types of dopants, although phosphorus is more effective in inducing this grain growth.

In undoped liquid-encapsulated Czochralski-grown semi-insulating gallium arsenide (LEC SI GaAs), the carbon acceptor, CAS, is responsible for the ∼1.49 eV emission due to donor-acceptor (D–A) pair radiative recombination. We have studied the effect of different carbon concentrations on the line shape and decay kinetics at and near the D–A emission peak for temperatures ranging from 4.2 to 34 K. The photoluminescence decay has been found to follow a double exponential law at the early stage of the decay but follows a power law of the form L(t)αT−p at a later stage. Analysis of the temperature dependence of the exponential components gives two activation energies of ≃5.7 and ≃15 meV. We find that the 5.7 meV is most likely associated with SiGa shallow donor, while the 15 meV is due to a more indirect process involving an EL2 related donor cluster near 20 meV. The exponent, p, of the power-law decay is found to be both temperature (T) and concentration dependent of the form p = βT −1, where β is a linear function of the concentration of the acceptors, CAs, in the temperature range of 18  T < 30 K. A promising, simplified model based on a continuous set of trapping levels is presented and compared to the experiments. Some aspects of the observed exponential and power law decays are predicted by the theory.

In this paper we report the influence of process variables, viz., substrate temperature, oxygen partial pressure, and external electric field bias, on phase precipitation and microstructure of tin oxide films as revealed by small-angle x-ray diffraction and conversion electron Mössbauer spectroscopy.

Oxidation of IrAl alloys (50-50 at.%) was conducted at 1300 and 1600°C in air for different times. Due to the outward diffusion of Al atoms and subsequent oxidation, the formation of Al2O3 is accompanied with the generation of an Ir-rich phase in the vicinity areas. The oxidation zone is separated from the bulk IrAl alloy by a phase boundary. In the oxidation zones, alternating layers of Al2O3 and Ir-rich phase are produced at 1300°C, while irregularly intertwined; Al2O3 and Ir-rich phase are produced at 1600 °C. The discontinuous formation of Al2O3 gives rise to internal oxidation of the IrAl alloys. The thickness of the Al2O3 layer is in the range of tens of micrometer, and it grows thicker as its location gets farther away from the free surface. The formation of an Al2O3/Ir-rich phase layered structure is discussed based on the diffusion kinetics of O, Al, and Ir, the chemical reactivities of Al and Ir with respect to O, and the nucleation and growth kinetics of Al2O3.

Microhardness measurements were carried out on ion implanted single crystal Y2O3 stabilized cubic ZrO2. Inert gas ions (Ne, Ar, Xe) and N, Si, Ti, and W were implanted up to fluences of 3 × 1017 ions/cm2. Implantation energies were selected to give equivalent ranges. Comparison of the Knoop microhardness values of ZrO2 implanted with various species over a range of fluences showed that the principal variable causing hardness changes is damage energy and not the ion fluence nor the ion species. For all implants studied, the hardness versus damage energy gives a unified plot. At low doses the hardness rises with increasing deposited damage energy to a value 15% higher than that of unimplanted zirconia. With additional damage the hardness drops to a value 15% lower than that of the unimplanted zirconia. Friction and wear measurements in a pin-on-disk assembly showed very different behavior for high dose versus unimplanted ZrO2. The unimplanted samples showed debris with an associated rise in friction. The implanted system showed much less debris and a constant value of friction even after 10 000 cycles.