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X-ray reflectometry and spectroscopic ellipsometry characterization of Al2O3 atomic layer deposition on HF-last and NH3 plasma pretreatment Si substrates

Published online by Cambridge University Press:  03 March 2011

Hong-Liang Lu ,
Min Xu ,
Shi-Jin Ding ,
Wei Chen ,
David Wei Zhang  and
Li-Kang Wang
Hong-Liang Lu
Affiliation:
State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China
Min Xu
Affiliation:
State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China
Shi-Jin Ding
Affiliation:
State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China
Wei Chen
Affiliation:
State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China
David Wei Zhang*
Affiliation:
State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China
Li-Kang Wang
Affiliation:
State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

Al2O3 films are grown by atomic layer deposition (ALD) using trimethylaluminum and water as precursors on HF-last and NH3 plasma pretreatment Si substrates. The thickness, surface roughness, and density of Al2O3 films as well as the nature of their interlayers with Si substrates are characterized by x-ray reflectivity and spectroscopic ellipsometry techniques. The growth rates of Al2O3 films are 1.1 Å/cycle and 1.3 Å/cycle, respectively, on HF-last and NH3-plasma-nitrided surfaces. Al2O3 layer densities are rather independent of the number of growth cycles in all cases. The interfacial film thickness increases with the number of ALD cycles when deposited on an HF-last Si substrate. However, because SiOxNy inhibits oxygen diffusion, the interfacial film thickness is independent of the number of ALD cycles on the nitrided Si substrate.

Keywords

Atomic layer depositionFilmX-ray reflectivity
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 5 , May 2007 , pp. 1214 - 1218
Copyright
Copyright © Materials Research Society 2007

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