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X-ray reflectivity spectra of ultrathin films and nanometric multilayers: Experiment and simulation

Published online by Cambridge University Press:  31 January 2011

E. Bontempi ,
L. E. Depero ,
L. Sangaletti ,
F. Giorgis  and
C. F. Pirri
E. Bontempi
Affiliation:
Istituto Nazionale per la Fisica della Materia and Laboratorio di Strutturistica Chimica, Dipartimento di Ingegneria Meccanica, Universitàdi Brescia, Via Branze 38, 25123 Brescia, Italy
L. E. Depero*
Affiliation:
Istituto Nazionale per la Fisica della Materia and Laboratorio di Strutturistica Chimica, Dipartimento di Ingegneria Meccanica, Universitàdi Brescia, Via Branze 38, 25123 Brescia, Italy
L. Sangaletti
Affiliation:
Istituto Nazionale per la Fisica della Materia and Dipartimento di Matematica e Fisica, Universita‘Cattolica del Sacro Cuore, Via dei Musei 41, 25123 Brescia, Italy
F. Giorgis
Affiliation:
Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy
C. F. Pirri
Affiliation:
Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy
*
a)Author correspondence to this author.[email protected]
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Abstract

Amorphous silicon–nitrogen (a–Si1−xNx:H) alloys, thin films, and multilayers deposited by ultrahigh-vacuum plasma-enhanced chemical vapor deposition were studied and modeled by x-ray reflectivity (XRR) measurements. The analysis of XRR data obtained from the single-layer samples allowed us to calculate the density, thickness, and interface roughness of each layer. To check the deposition parameters, the deviation (tnom – texp)/(tnom) of the measured thickness texp from the nominal thickness tnom was evaluated. Based on these results, a simulation of a multilayer film, obtained by deposition alternating stoichiometric and substoichimetric layers was carried out. It is shown that the best fitting is obtained by introducing into the XRR calculation a thickness distribution with a standard deviation related to the deviation (tnom – texp)/(tnom) estimated for the single layers.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 9 , September 2001 , pp. 2556 - 2561
Copyright
Copyright © Materials Research Society 2001

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