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Waveguide formation of KTiOPO4 by multienergy MeV He+ implantation

Published online by Cambridge University Press:  31 January 2011

Ke-Ming Wang
Affiliation:
Department of Physics, Shandong University, Jinan 250100, Shandong, China
Bo-Rong Shi
Affiliation:
Department of Physics, Shandong University, Jinan 250100, Shandong, China
Pei-Jun Ding
Affiliation:
Department of Physics, University at Albany, Albany, New York 12222
Wei Wang
Affiliation:
Department of Physics, University at Albany, Albany, New York 12222
W. A. Lanford
Affiliation:
Department of Physics, University at Albany, Albany, New York 12222
Zhuang Zhuo
Affiliation:
Institute of Crystal Material, Shandong University, Jinan 250100, Shandong, China
Yao-Gang Liu
Affiliation:
Institute of Crystal Material, Shandong University, Jinan 250100, Shandong, China
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Abstract

X-cut potassium titanyl phosphate (KTiOPO4 or KTP) was implanted by multienergy MeV He+ implantation with a total dose of 2 × 1016 ions/cm2 at liquid nitrogen temperature. The energy and dose used are as follows: 3.3 MeV and 2 × 1015 ions/cm2, 3.2 MeV and 4 × 1015 ions/cm2, 3.1 MeV and 4 × 1015 ions/cm2, and 3.0 MeV and 1.0 × 1016 ions/cm2 to reduce tunneling effect. The 22 dark modes were measured by the isosceles prism coupling method. The 15 bright modes were observed after 250 °C, 60 min annealing. The result shows that the waveguide formation of KTiOPO4 implanted by MeV He+ is not strongly dependent on the cut direction, which is different from the waveguide formation of KTiOPO4 by ion exchange process.

Type
Articles
Copyright
Copyright © Materials Research Society 1996

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References

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