Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-05T05:30:20.163Z Has data issue: false hasContentIssue false
  • English
  • Français

Upgrading the Triboluminescence of ZnS:Mn Film by Optimization of Sputtering and Thermal Annealing Conditions

Published online by Cambridge University Press:  31 January 2011

O. Agyeman ,
C. N. Xu ,
M. Suzuki  and
X. G. Zheng
O. Agyeman
Affiliation:
National Institute of Advanced Industrial Science and Technology, AIST, Kyushu, Shuku 807–1, Tosu, Saga 841–0052, Japan, andDepartment of Physics, Saga University, Saga 840–8502, Japan
C. N. Xu*
Affiliation:
National Institute of Advanced Industrial Science and Technology, AIST, Kyushu, Shuku 807–1, Tosu, Saga 841–8502, Japan
M. Suzuki
Affiliation:
Department of Physics, Saga University, Saga 840–8502, Japan
X. G. Zheng
Affiliation:
Department of Physics, Saga University, Saga 840–8502, Japan
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Extract

A statistical method of the design of experiments and analysis of variance (ANOVA) was used to obtain optimized sputtering conditions for oriented ZnS thin films doped with 5% manganese on glass substrates. The effects on the five sputtering factors—substrate temperature, radio frequency power, sputtering pressure, sputtering time, and pre-sputtering time—were simultaneously investigated by using the design of experiments and ANOVA. Through only 16 experiments, it was proved statistically at the 5% level that the substrate temperature was the only significant control factor. ZnS films were then deposited under the optimized sputtering conditions on fused quartz and thermally annealed in a reducing ambient (5% H2 diluted in Ar) at 500, 600, 700, and 800 °C. It was found that the crystallinity and triboluminescence intensity of the films were enhanced by postannealing up to 700 °C.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 5 , May 2002 , pp. 959 - 963
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Ropp, R.C., Luminescence and the Solid State (Elsevier, Amsterdam, The Netherlands, 1991), p. 296.Google Scholar
2.Bessergenev, V.G., Ivanova, E.N., Kovalevskaya, Y.A., Gromilov, S.A., Kirichenko, V.N., Zemskova, S.M., Vasilieva, I.G., Ayupov, B.M., and Shwarz, N.L., Mater. Res. Bull. 30, 1393 (1995).CrossRefGoogle Scholar
3.Wu, P., Keshaw, R., Dweightand, K., Wold, A., Mater. Res. Bull. 24, 49 (1989).CrossRefGoogle Scholar
4.Miyata, T., Minami, T., and Takata, S., J. Cryst. Growth 117, 1021 (1992).CrossRefGoogle Scholar
5.Takagi, T., Yamada, I., and Sasaki, A., Thin Solid Films 45, 569 (1977).CrossRefGoogle Scholar
6.Xu, C.N., Watanabe, T., Akiyama, M., and Zheng, X.G., Appl. Phys. Lett. 74, 1236 (1999).CrossRefGoogle Scholar
7.Walton, A.J., Adv. Phys. 26, 887 (1997).Google Scholar
8.Alzeta, G., Chaducek, I., and Scarmozzino, R., Phys. Status Solidi A 1, 177 (1970).Google Scholar
9.Nakayama, K. and Hashimoto, H., Wear 147, 335 (1991).CrossRefGoogle Scholar
10.Enomoto, Y. and Hashimoto, H., Nature (London) 346, 641 (1990).CrossRefGoogle Scholar
11.Xu, C.N., Watanabe, T., Akiyama, M., and Zheng, X.G., Mater. Res. Bull. 34, 1491 (1999).Google Scholar
12.Xu, C.N., Watanabe, T., Akiyama, M., and Zheng, X.G., J. Am. Ceram. Soc. 82, 2342 (1999).CrossRefGoogle Scholar
13.Tsakonas, C. and Thomas, C.B., J. Appl. Phys. 78, 6098 (1995).CrossRefGoogle Scholar
14.Usui, I., Tamai, F., Towata, Y., and Yamada, T., J. Ceram. Soc. Jpn. 105, 97 (1997).CrossRefGoogle Scholar
15.Akiyama, M., Xu, C.N., Nonaka, K., Shobu, K., and Watanabe, T., Thin Solid Films 315, 62 (1998).CrossRefGoogle Scholar
16.Nanto, H., Minami, T., Shooji, S., and Takata, S., Appl. Phys. Lett. 55, 1029 (1984).Google Scholar