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Transmission electron study of heteroepitaxial growth in the BiSrCaCuO system

Published online by Cambridge University Press:  31 January 2011

A. Chaiken
Affiliation:
Materials Science and Technology Division, Lawrence Livermore National Laboratory, Livermore, California 94550
M. A. Wall
Affiliation:
Materials Science and Technology Division, Lawrence Livermore National Laboratory, Livermore, California 94550
R. H. Howell
Affiliation:
Materials Science and Technology Division, Lawrence Livermore National Laboratory, Livermore, California 94550
I. Bozovic
Affiliation:
E. L. Ginzton Research Laboratory, Varian Associates, Inc., Palo Alto, California 94304–1025
J. N. Eckstein
Affiliation:
E. L. Ginzton Research Laboratory, Varian Associates, Inc., Palo Alto, California 94304–1025
G. F. Virshup
Affiliation:
E. L. Ginzton Research Laboratory, Varian Associates, Inc., Palo Alto, California 94304–1025
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Abstract

Films of Bi2Sr2CaCu2O8 and Bi2Sr2CuO6 have been grown using Atomic-Layer-by-Layer Molecular Beam Epitaxy (ALL-MBE) on lattice-matched substrates. These materials have been combined with layers of closely related metastable compounds like Bi2Sr2Ca7Cu8O20 (2278) and rare-earth-doped compounds like Bi2Sr2DyxCa1–xCu2O8 (Dy: 2212) to form heterostructures with unique superconducting properties, including superconductor/insulator multilayers and tunnel junctions. Transmission electron microscopy (TEM) has been used to study the morphology and microstructure of these heterostructures. These TEM studies shed light on the physical properties of the films, and give insight into the growth mode of highly anisotropic solids like Bi2Sr2CaCu2O8.

Type
Articles
Copyright
Copyright © Materials Research Society 1996

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References

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