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Thin film epitaxy and near bulk semiconductor to metal transition in VO2/NiO/YSZ/Si(001) heterostructures

Published online by Cambridge University Press:  22 November 2012

Roya Molaei ,
Mohammad Reza Bayati  and
Jagdish Narayan
Roya Molaei*
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7906
Mohammad Reza Bayati
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7906
Jagdish Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7906
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

We have grown VO2/NiO epitaxial thin films by pulsed laser deposition where integration with Si(001) substrates was achieved by cubic yttria-stabilized zirconia (YSZ) buffer layer. The most interesting aspect of this work is that a complete relaxation along c-axis of VO2 is achieved in these large misfit systems through the domain matching epitaxy paradigm, which is critical for controlling the semiconductor to metal transition (SMT) characteristics. Regarding x-ray diffraction and cross-sectional transmission electron microscopy results, the epitaxial relationship across the YSZ/Si(001) interface was (001)[100]YSZ‖(001)[100]Si. In the case of YSZ/NiO interface, the epitaxial relationship was $(001)[010]_{{\rm{YSZ}}} \parallel (111)[00\overline 1 ]_{{\rm{NiO}}} $. The epitaxial relationship at the NiO/VO2 interface was determined to be $(010)[001]_{{\rm{VO2}}} \parallel (111)[00\overline 1 ]_{{\rm{NiO}}} $. The SMT characteristics of these fully relaxed films were determined, and a transition temperature of 341 K with amplitude over four orders of magnitude and the hysteresis of 3.4 K hysteresis were obtained, which are close to those of the bulk high quality single crystals.

Keywords

electrical propertiesepitaxyfilmoxidesemiconducting
Type
Articles
Information
Journal of Materials Research , Volume 27 , Issue 24 , 28 December 2012 , pp. 3103 - 3109
Copyright
Copyright © Materials Research Society 2012

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