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Thermodynamically stable tungsten ohmic contacts to n-In0.53Ga0.47As

Published online by Cambridge University Press:  31 January 2011

D. Y. Chen ,
Y. A. Chang ,
D. Swenson  and
F. R. Shepherd
D. Y. Chen
Affiliation:
Lucent Technologies Microelectronics, 2525 North 12th Street, Reading, Pennsylvania 19612
Y. A. Chang
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin, 1509 University Avenue, Madison, Wisconsin 53706
D. Swenson
Affiliation:
Department of Metallurgical and Materials Engineering, Michigan Technological University, 1400 Townsend Drive, Houghton, Michigan 49931
F. R. Shepherd
Affiliation:
Nortel Technology, Ottawa, Canada K1Y 4H7
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Abstract

Based on a thermodynamic assessment of the W–In–Ga–As quaternary system, the metal W was selected as a thermodynamically stable ohmic contact material to n-In0.53Ga0.47As. As-deposited contacts (on n ∼ 1.4 × 1018 cm−3 In0.53Ga0.47As) had average specific contact resistances of 7 × 10−7 Ω ·cm2 as measured using the transmission line model. The contact resistances remained unchanged after rapid thermal annealing at 400 °C for 1 min or at 600 °C for 1 min, and exhibited no degradation in electrical properties even after long-term annealing at 500 °C for 100 h. Transmission electron microscopic examination of the contacts showed no interfacial reaction. The present investigation demonstrates the power of thermodynamics in identifying stable ohmic contacts to multicomponent semiconductors.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 4 , April 1998 , pp. 959 - 964
Copyright
Copyright © Materials Research Society 1998

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