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Thermodynamic modeling of the Ni–Al–Ga–N system

Published online by Cambridge University Press:  03 March 2011

B.A. Hull ,
S.E. Mohney  and
Z-K. Liu
B.A. Hull
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
S.E. Mohney
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
Z-K. Liu
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
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Abstract

Isothermal sections in the Ni–Al–Ga–N quaternary phase diagram were calculated to provide a greater understanding of interfacial reactions between Ni contacts and AlxGa1−xN. The calculations were performed employing a thermodynamic database of the Ni–Al–Ga–N system that was constructed by combining the six binary systems of the four component system. The model of the Ga–N binary system was created in this work. The models of the Ni–Ga and Ni–Al systems, both of which were taken from the literature, were modified to be compatible with one another. Thermodynamic data and phase boundaries for other binary systems were taken from the literature, as was information on portions of the Al–Ga–N and Ni–Al–Ga phase diagrams. The calculated sections reveal that during reaction between Ni and AlxGa1−xN, Ni is favored to react with the GaN component of the semiconductor alloy, leaving an Al-enriched AlxGa1−xN. These predictions are consistent with a recent analysis of the Ni, Al, and Ga elemental distributions across the interface between a Ni thin film and an Al0.47Ga0.53N epitaxial layer following annealing at 850 °C. Consideration of the thermodynamic driving forces suggests that this may be a general phenomenon existing in other metal–Al–Ga–N systems.

Keywords

Phase equilibriaElectronic materialContact
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 6 , June 2004 , pp. 1742 - 1751
Copyright
Copyright © Materials Research Society 2004

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