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Thermal conductivity of diamond films deposited at low surface temperatures

Published online by Cambridge University Press:  03 March 2011

D. Das ,
Raj N. Singh ,
S. Chattopadhyay  and
K.H. Chen
D. Das
Affiliation:
Department of Chemical and Materials Engineering, University of Cincinnati, Cincinnati, Ohio 45221
Raj N. Singh*
Affiliation:
Department of Chemical and Materials Engineering, University of Cincinnati, Cincinnati, Ohio 45221
S. Chattopadhyay
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan 106, Republic of China
K.H. Chen
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan 106, Republic of China
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

Polycrystalline diamond films are deposited on p-type Si (100) and n-type SiC (6H) substrates at the low surface deposition temperatures of 370 °C–530 °C using a microwave plasma-enhanced chemical vapor deposition system in which the surface temperature during deposition is monitored and controlled. A very high growth rate up to 1.3 μm/h on SiC substrate at 530 °C surface temperature is obtained. The room temperature in-plane thermal conductivity of the low-surface-temperature–deposited thin films is measured by a traveling wave method. The diamond films of grain sizes between 3 and 7 μm and deposited at 370 °C showed a high thermal conductivity value of ∼6.5 W/cm-K, which is much higher than the single crystal SiC thermal conductivity value at room temperature. Diamond films deposited on Si and SiC single crystals at higher temperatures showed even higher thermal conductivities of 11–17 W/cm-K. The structure and microstructure of these films are characterized by x-ray diffraction, scanning electron microscopy, and Raman spectroscopy, and are related to measured thermal conductivities.

Keywords

Chemical vapor depositionDiamondThermal conductivity
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 9 , September 2006 , pp. 2379 - 2388
Copyright
Copyright © Materials Research Society 2006

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