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Thermal annealing of amorphous Ti–Si–O thin films

Published online by Cambridge University Press:  31 January 2011

Abbas Hodroj ,
Odette Chaix-Pluchery ,
Marc Audier ,
Ulrich Gottlieb  and
Jean-Luc Deschanvres
Abbas Hodroj*
Affiliation:
Laboratoire des Matériaux et du Génie Physique (CNRS—INP Grenoble), Minatec, Bâtiment INPG, 38016 Grenoble Cedex 1, France
Odette Chaix-Pluchery
Affiliation:
Laboratoire des Matériaux et du Génie Physique (CNRS—INP Grenoble), Minatec, Bâtiment INPG, 38016 Grenoble Cedex 1, France
Marc Audier
Affiliation:
Laboratoire des Matériaux et du Génie Physique (CNRS—INP Grenoble), Minatec, Bâtiment INPG, 38016 Grenoble Cedex 1, France
Ulrich Gottlieb
Affiliation:
Laboratoire des Matériaux et du Génie Physique (CNRS—INP Grenoble), Minatec, Bâtiment INPG, 38016 Grenoble Cedex 1, France
Jean-Luc Deschanvres
Affiliation:
Laboratoire des Matériaux et du Génie Physique (CNRS—INP Grenoble), Minatec, Bâtiment INPG, 38016 Grenoble Cedex 1, France
*
a)Address all correspondence to this author e-mail: [email protected]
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Abstract

Ti–Si–O thin films were deposited using an aerosol chemical vapor deposition process at atmospheric pressure. The film structure and microstructure were analyzed using several techniques before and after thermal annealing. Diffraction results indicate that the films remain x-ray amorphous after annealing, whereas Fourier transform infrared spectroscopy gives evidence of a phase segregation between amorphous SiO2 and well-crystallized anatase TiO2. Crystallization of anatase TiO2 is also clearly shown in the Raman spectra. Transmission electron microscopy analysis indicates that anatase TiO2 nanograins are embedded in a SiO2 matrix in an alternated SiO2/TiO2 multilayer structure.

Keywords

AnnealingNanostructureThin film
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 3 , March 2008 , pp. 755 - 759
Copyright
Copyright © Materials Research Society 2008

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References

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