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Texture Analysis of Thin In2O3:Sn Films Prepared by Direct-current and Radio-frequency Magnetron-sputtering

Published online by Cambridge University Press:  03 March 2011

Dieter Mergel*
Affiliation:
Universität Duisburg-Essen, Fachbereich Physik, Campus Essen, 45117 Essen, Germany
Karola Thiele
Affiliation:
Universität Göttingen, Institut für Materialphysik, 37073 Göttingen, Germany
Zhaohui Qiao
Affiliation:
Universität Duisburg-Essen, Fachbereich Physik, Campus Essen, 45117 Essen, Germany
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

Thin In2O3:Sn (ITO) films prepared by radio-frequency (rf) or direct-current (dc) magnetron-sputtering and in central or peripheral position relative to the target were characterized by x-ray diffractograms and pole figures. The diffractograms were normalized with the powder diffraction intensities of the target. In the normalized diffractograms, a random texture level and preferred orientations can be distinguished. The pole figures are represented by normalized χ-scans that are modeled as a sum of Gaussian curves. The centers of the Gaussian curves are consistent with the prominent orientations of the normalized diffractograms. The textures of the rf-sputtered films in the central and the peripheral position are similar, showing strong contributions from (211)-planes. The texture of dc-sputtered samples is dominated by (400) and (411) planes. In the peripheral sample, the distribution of (400)- and (411)-oriented grains is shifted towards the incidence angle of the particle flux and the frequency of the (222)-grains is suppressed below the random texture level. The results are discussed with reference to a model of incorporation of interstitial oxygen into the growing films.

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Articles
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1Kobayashi, H., Ishida, T., Nakamura, K., Nakato, Y. and Tsubomura, H.: Properties of indium tin oxide films prepared by the electron beam evaporation method in relation to characteristics of indium tin oxide/silicon oxide/silicon junction solar cells. J. Appl. Phys. 72, 5288 (1992).CrossRefGoogle Scholar
2Latz, R., Michael, K. and Scherer, M.: High conducting large area indium tin oxide electrodes for displays prepared by dc magnetron sputtering. Jpn. J. Appl. Phys. 30, L149 (1991).CrossRefGoogle Scholar
3Löbl, H.P., Huppertz, M. and Mergel, D.: ITO films for antireflective and antistatic tube coatings prepared by dc magnetron sputtering. Surf. Coat. Technol. 82, 90 (1996).CrossRefGoogle Scholar
4Adourodija, F.O., Izumi, H., Ishihara, T., Yoshioka, H. and Motoyama, M.: Effect of Sn doping on the electronic transport mechanism of indium-tin-oxide films grown by pulsed laser deposition coupled with substrate irradiation. J. Appl. Phys. 88, 4175 (2000).CrossRefGoogle Scholar
5Mergel, D.: Thin films of ITO as conductive, transparent electrodes. Vakuum in Forschung und Praxis 16, 58 2004 , in German.CrossRefGoogle Scholar
6Thiele, K., Sievers, S., Jooss, C., Hoffmann, J. and Freyhardt, H.C.: Room-temperature preparation of biaxially textured indium tin oxide thin films with ion-beam-assisted deposition. J. Mater. Res. 18, 442 (2003).CrossRefGoogle Scholar
7Mergel, D., Stass, W., Ehl, G. and Barthel, D.: Oxygen incorporation in thin films of In2O3:Sn prepared by radio-frequency sputtering. J. Appl. Phys. 88, 2437 (2000).CrossRefGoogle Scholar
8Mergel, D., Schenkel, M., Ghebre, M. and Sulkowski, M.: Structural and electrical properties of In2O3:Sn films prepared by radio-frequency sputtering. Thin Solid Films 392, 91 (2001).CrossRefGoogle Scholar
9Mergel, D. and Qiao, Z.: Correlation of lattice distortion with optical and electrical properties of In2O3:Sn films. J. Appl. Phys. 95, 5608 (2004).Google Scholar
10Taniguchi, H., Ushiro, T., Okamoto, Y., Akagi, Y. and Koba, M.: Influence of preferred orientation in indium tin oxide, in Evolution of Surface and Thin Film Microstructure, edited by Atwater, H.A., Chason, E., Grabow, M.H., and Lagally, M.G. (Mater. Res. Soc. Symp. Proc. 280, Pittsburgh, PA, 1993), p. 523.Google Scholar
11Meng, L.J. and Santos, M.P. dos: Structure effect on electrical properties of ITO films prepared by RF reactive magnetron sputtering. Thin Solid Films 289, 65 (1996).CrossRefGoogle Scholar
12Steffes, H., Imawan, C., Solzbacher, F. and Obermeier, E.: Fabrication parameters and NO2 sensitivity of reactively rf-sputtered In2O3 thin films. Sens. Actuators B 68, 249 (2000).CrossRefGoogle Scholar
13Qiao, Z. and Mergel, D.: Comparison of radio-frequency and direct-current magnetron sputtered thin In2O3:Sn films. Thin Solid Films 484, 146 (2005).CrossRefGoogle Scholar
14 Powder Diffraction File, ASTM, JCPDS-ICDD 6-416 (Joint Committee on Powder Diffraction Standards, Philadelphia, PA, 1991).Google Scholar
15Kamei, M., Shigesato, Y. and Takaki, S.: Origin of characteristic grain-subgrain structure of tin-doped indium oxide films. Thin Solid Films 259, 38 (1995).CrossRefGoogle Scholar
16Huber, P., Manova, D., Mändl, S. and Rauschenbach, B.: Lateral homogeneity variation in metal plasma immersion ion implantation and deposition. Surf. Coat. Technol. 156, 176 (2002).CrossRefGoogle Scholar
17Rauschenbach, B. and Helming, K.: Implantation-induced texture. Nucl. Instrum. Methods B42, 216 (1989).Google Scholar
18Yamada, N., Yasui, I., Shigesato, Y., Li, H., Ujihara, Y. and Nomura, K.: Doping mechanism of Sn in In2O3 powder studied using 119Sn Mössbauer spectroscopy and x-ray diffraction. Jpn. J. Appl. Phys. 38, 2856 (1999).Google Scholar