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Texture analysis of manganese-germanide/germanium nanowire heterostructures by high resolution electron microscopy and diffraction

Published online by Cambridge University Press:  26 July 2011

E.R. Hemesath ,
J.L. Lensch-Falk  and
L.J. Lauhon
E.R. Hemesath
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
J.L. Lensch-Falk
Affiliation:
Materials Physics Department, Sandia National Laboratories, Livermore, California 94550
L.J. Lauhon*
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Syntaxial growth of Mn11Ge8/Ge nanowire heterostructures was carried out using a vapor–solid–solid (VSS) growth process, and transmission electron microscopy imaging and selected-area electron diffraction were used to study the structure, orientation, and interface of each phase. Preferred crystallographic relationships were found to exist between the Mn11Ge8 seeds, which exhibit a single uniaxial growth direction, and the seeded Ge nanowires, which exhibit multiple growth directions. The crystallographic relationships for individual nanowire heterostructures were characterized in the context of microtexture analysis, which has not previously been applied to nanowire heterostructures. Fiber and off-normal fiber textures were predominant, although examples of epitaxial and uniaxial in-plane textures were also identified. Microtexture analysis of VSS-grown nanowire systems is shown to provide a useful perspective on the products of synthesis that can lead to new insights into growth mechanisms.

Keywords

NanostructureTransmission electron microscopySemiconducting
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 17: Focus Issue: Nanowires: Fundamentals and Applications , 14 September 2011 , pp. 2299 - 2304
Copyright
Copyright © Materials Research Society 2011

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